Group III nitride compound semiconductor light-emitting element

• US 20030222270A1
• Filed: 05/29/2003
• Published: 12/04/2003
• Est. Priority Date: 05/31/2002
• Status: Abandoned Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Uemura, Toshiya
• Application Number:
  US10/446,823
• Publication Number:
  US 20030222270A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An uppermost layer of a portion of electrodes revealed from an electrically insulating layer with which a surface of a light-emitting element is covered is formed of at least one kind of metal or an alloy of the metal selected from the group consisting of Ni, Cu, Ag, Fe and Mo, which is easy to make an alloy with solder.

Claims

1. A Group III nitride compound semiconductor light-emitting element of a flip chip type, comprising an electrically insulating layer from which a portion of an electrode is revealed, wherein an uppermost layer of said revealed portion of said electrode is made of at least one kind of metal or an alloy of the metal selected from the group consisting of Ni, Cu, Ag, Fe, and Mo.

2. A Group III nitride compound semiconductor light-emitting element according to claim 1, wherein a barrier layer for preventing a corrosive component contained in solder from penetrating into each of said electrodes is formed under said uppermost layer.

3. A Group III nitride compound semiconductor light-emitting element according to claim 2, wherein said barrier layer is made of at least one kind of metal or an alloy of the metal selected from the group consisting of Ti, W, Mo, V, and Ta.

4. A Group III nitride compound semiconductor light-emitting element according to claim 2, wherein a layer containing Au is formed under said barrier layer and surrounds a junction layer electrically joined to a semiconductor layer.

5. A Group III nitride compound semiconductor light-emitting element according to claim 4, wherein said junction layer is made of Rh and joined to a p-type semiconductor layer.

6. A Group III nitride compound semiconductor light-emitting element according to claim 4, wherein said junction layer is made of an alloy of Al and V or a double-layer structure of V and Al, and joined to an n-type semiconductor layer.

7. A Group III nitride compound semiconductor light-emitting element according to claim 1, wherein an adhesive layer is interposed between said uppermost layer and said electrically insulating layer.

8. A light-emitting device comprising:

a Group III nitride compound semiconductor light-emitting element according to one of claims 1 to 7; and

an external electrode, wherein the revealed portion of said electrode of said light-emitting element is connected to said external electrode through solder.

9. A Group III nitride compound semiconductor light-emitting element comprising:

a substrate;

n-type and p-type layers laminated on said substrate;

a combination of an n-electrode and a p-electrode disposed on a surface side of said substrate; and

an electrically insulating film with which said light-emitting element except a portion of said n-electrode and the p-electrode are covered,

wherein said electrically insulating film is at least partially separated at a region where said n-electrode and said p-electrode are opposed and not formed.