Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same
First Claim
1. A memory device comprising:
- a lower interlayer dielectric layer on a semiconductor substrate;
a plurality of first phase changeable data storage elements on the lower interlayer dielectric layer;
a middle interlayer dielectric layer covering the first phase changeable data storage elements and the lower interlayer dielectric layer;
a plurality of second phase changeable data storage elements on the middle interlayer dielectric layer, the first and second phase changeable data storage elements being arrayed in rows and columns such that respective first phase changeable data storage elements are disposed between respective adjacent second phase changeable data storage elements in the rows and columns; and
a plate electrode overlying the first and second phase changeable data storage elements and electrically connected to the first and second phase changeable data storage elements.
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Abstract
A phase changeable memory device includes a lower interlayer dielectric layer on a semiconductor substrate. A plurality of first phase changeable data storage elements is disposed on the lower interlayer dielectric layer. A middle interlayer dielectric layer covers the first phase changeable data storage elements and the lower interlayer dielectric layer. A plurality of second phase changeable data storage elements is disposed on the middle interlayer dielectric layer. The first and second phase changeable data storage elements are arrayed in rows and columns such that respective first phase changeable data storage elements are disposed between respective adjacent second phase changeable data storage elements in the rows and columns. A plate electrode overlies the first and second phase changeable data storage elements and is electrically connected to the first and second phase changeable data storage elements. Related fabrication methods are also disclosed.
17 Citations
33 Claims
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1. A memory device comprising:
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a lower interlayer dielectric layer on a semiconductor substrate;
a plurality of first phase changeable data storage elements on the lower interlayer dielectric layer;
a middle interlayer dielectric layer covering the first phase changeable data storage elements and the lower interlayer dielectric layer;
a plurality of second phase changeable data storage elements on the middle interlayer dielectric layer, the first and second phase changeable data storage elements being arrayed in rows and columns such that respective first phase changeable data storage elements are disposed between respective adjacent second phase changeable data storage elements in the rows and columns; and
a plate electrode overlying the first and second phase changeable data storage elements and electrically connected to the first and second phase changeable data storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of fabricating a phase changeable memory device comprising:
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forming a lower interlayer dielectric layer on a semiconductor substrate;
forming a plurality of first phase changeable data storage elements on the lower interlayer dielectric layer;
forming a middle interlayer dielectric layer covering the first phase changeable data storage elements and the lower interlayer dielectric layer;
forming a plurality of second phase changeable data storage elements on the middle interlayer dielectric layer, the first and second phase changeable data storage elements being arrayed in rows and columns such that respective first phase changeable data storage elements are disposed between respective adjacent second phase changeable data storage elements in the rows and columns; and
forming a plate electrode overlying the first and second phase changeable data storage elements and electrically connected to the first and second phase changeable data storage elements. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification