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BACKPLANES FOR DISPLAY APPLICATIONS, AND COMPONENTS FOR USE THEREIN

  • US 20030222315A1
  • Filed: 04/24/2003
  • Published: 12/04/2003
  • Est. Priority Date: 04/24/2002
  • Status: Active Grant
First Claim
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1. A transistor comprising a source electrode, a drain electrode spaced from the source electrode by a channel, a semiconductor layer extending across the channel, and a gate electrode disposed adjacent the channel such that application of a voltage to the gate electrode will vary the conductivity of the semiconductor layer extending across the channel, the gate electrode having a first gate electrode edge and a second gate electrode edge spaced from the first gate electrode edge, the drain electrode having a first drain electrode edge portion which overlaps the first gate electrode edge to define a first overlap area, the drain electrode also having a second drain electrode edge portion which overlaps the second gate electrode edge to define a second overlap area, such that translation of the gate electrode relative to the drain electrode in a direction which increases the first overlap area will decrease the second overlap area, or vice versa.

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