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Epitaxial growth for waveguide tapering

  • US 20030223671A1
  • Filed: 05/31/2002
  • Published: 12/04/2003
  • Est. Priority Date: 05/31/2002
  • Status: Active Grant
First Claim
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1. A method for fabricating a taper, comprising:

  • disposing a semiconductor waveguide on a substrate;

    forming a protective layer on the semiconductor waveguide;

    removing a portion of the protective layer to expose a portion of the semiconductor waveguide, the exposed portion of the semiconductor waveguide defining a footprint of the taper; and

    forming a semiconductor layer on the exposed portion of the semiconductor waveguide to form the taper, the taper having a termination end and a longitudinal axis, wherein the termination end has at least one unetched surface that is angled relative to the longitudinal axis.

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