Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same

• US 20030224582A1
• Filed: 04/23/2003
• Published: 12/04/2003
• Est. Priority Date: 08/27/1996
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi, Shimoda, Tatsuya, Miyazawa, Wakao
• Granted Patent: US 6,818,530 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. The transferring method may also include providing a substrate, forming a separation layer over the substrate, forming a transferred layer over the separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern. The transferring method may also include joining a transfer member to the transferred layer, removing the transferred layer from the substrate and transferring the transferred layer to the transfer member, these of which constitute a transfer process, the transfer process being repeatedly performed.

Claims

1. A transferring method, comprising:

providing a substrate;

forming a transferred layer over the substrate;

joining a transfer member to the transferred layer; and

removing the transferred layer from the substrate;

transferring the transferred layer to the transfer member; and

reusing the substrate for another transfer.

2. The transferring method according to claim 1, exfoliation being caused at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being removed from the substrate.

3. The transferring method, according to claim 2, the separation layer being irradiated with light to cause the exfoliation.

4. The transferring method according to claim 2, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.

5. The transferring method according to claim 4, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.

6. The transferring method according to claim 5, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.

7. The transferring method according to claim 4, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.

8. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.

9. The method of manufacturing an active matrix substrate, comprising:

forming a separation layer over the substrate;

forming a transferred layer, including a plurality of thin film transistors, above the substrate;

removing the transferred layer from the substrate;

transferring the transferred layer to the transfer member; and

reusing the substrate for another transfer.

10. The method for manufacturing an active matrix substrate according to claim 9, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which having the transistor.

11. A transferring method, comprising:

providing a substrate;

forming a separation layer over the substrate;

forming a transferred layer over the separation layer; and

partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern.

12. The transferring method, according to claim 11, an exfoliation being caused at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being removed from the substrate.

13. The transferring method, according to claim 12, the separation layer being partly irradiated with light to cause the exfoliation.

14. The transferring method, according to claim 13, the light being irradiated through a mask.

15. The transferring method, according to claim 13, a position for the irradiation being controlled.

16. The transferring method of claim 11, the separation layer being repeatedly transferred to the transfer member.

17. The transferring method of claim 16, the transfer member being larger than the substrate.

18. The transferring method of claim 16, the transferred layer being transferred side by side in the repeating cycle.

19. The transferring method according to claim 11, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.

20. The transferring method according to claim 19, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.

21. The transferring method according to claim 20, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.

22. The transferring method according to claim 20, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.

23. The transferring method according to claim 11, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.

24. A method for manufacturing an active matrix substrate, comprising:

providing a substrate;

forming a separation layer over the substrate;

forming a transferred layer including a plurality of thin film transistors, above the separation layer; and

partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern, repeatedly.

25. The transferring method of claim 24, the transfer member being larger than the substrate.

26. The method of manufacturing an active matrix substrate according to claim 24, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which has the transistor.

27. A transferring method, comprising:

providing a substrate;

forming a transferred layer over the substrate;

joining a transfer member to the transferred layer;

removing the transferred layer from the substrate;

transferring the transferred layer to the transfer member; and

joining the transfer member, removing the transferred layer and transferring the transferred layer constituting a transfer process, the transfer process being repeatedly performed.

28. The transferring method, according to claim 27, exfoliation being caused at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being removed from the substrate.

29. The transferring method, according to claim 27, the separation layer being irradiated with light to cause the exfoliation.

30. The transferring method, according to claim 27, the transfer process being repeatedly performed for an even number of times.

31. The transferring method according to claim 27, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.

32. The transferring method according to claim 31, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.

33. The transferring method according to claim 32, the substrate having transparency, and being illuminated form the substrate side to harden the adhesive.

34. The transferring method according to claim 31, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.

35. The transferring method according to claim 27, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.

36. A method for manufacturing an active matrix substrate, comprising:

forming a separation layer over the substrate;

forming a transferred layer, including a plurality of thin film transistors, above the substrate;

joining a transfer member to the transferred layer;

removing the transferred layer from the substrate;

transferring the transferred layer to the transfer member; and

joining the transfer member, removing the transferred layer and transferring the transferred layer constituting a transfer process, the transfer process being repeatedly performed.

37. The method for manufacturing an active matrix substrate according to claim 36, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which has the transistor.