Methods of fabricating integrated circuit gates by pretreating prior to oxidizing
First Claim
Patent Images
1. A method of fabricating an integrated circuit gate comprising:
- forming an insulated gate on an integrated circuit substrate, the insulated gate comprising a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern;
treating the insulated gate in an atmosphere comprising hydrogen and nitrogen gasses; and
then oxidizing the polysilicon sidewalls.
1 Assignment
0 Petitions
Accused Products
Abstract
Integrated circuit gates are fabricated by forming an insulated gate on an integrated circuit substrate, wherein the insulated gate includes a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern. The insulated gate is pretreated with hydrogen and nitrogen gasses. The polysilicon sidewalls are then oxidized. The pretreating in hydrogen and nitrogen gasses prior to oxidizing can reduce growth in thickness of the gate oxide during the oxidizing and/or can reduce formation of whiskers on the metal pattern, compared to absence of the pretreatment.
14 Citations
28 Claims
-
1. A method of fabricating an integrated circuit gate comprising:
-
forming an insulated gate on an integrated circuit substrate, the insulated gate comprising a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern;
treating the insulated gate in an atmosphere comprising hydrogen and nitrogen gasses; and
thenoxidizing the polysilicon sidewalls. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method of fabricating an integrated circuit gate comprising:
-
forming an insulated gate on an integrated circuit substrate, the insulated gate comprising a gate oxide on the integrated circuit substrate, a polysilicon pattern on the gate oxide and a metal pattern on the polysilicon pattern;
treating the insulated gate in a first atmosphere comprising hydrogen and nitrogen gasses; and
thentreating the insulated gate in a second atmosphere comprising hydrogen and oxygen gasses. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
-
23. A method of fabricating an integrated circuit gate comprising:
-
forming an insulated gate on an integrated circuit substrate, the insulated gate comprising a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern; and
oxidizing the polysilicon sidewalls;
wherein the oxidizing is preceded by pretreating the insulated gate to reduce growth in thickness of the gate oxide during the oxidizing and/or formation of whiskers on the metal pattern, compared to absence of the pretreating. - View Dependent Claims (24, 25, 26, 27, 28)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSamsung Electronics Co. Ltd.
-
Original AssigneeSamsung Electronics Co. Ltd.
-
InventorsYoun, Sun-Pil, Choi, Si-Young, Kim, Sung-Man, Ku, Ja-Hum, Cho, Jun-Kyu
-
Granted Patent
-
Time in Patent OfficeDays
-
Field of Search
-
US Class Current438/585
-
CPC Class CodesH01L 21/28061 the conductor comprising a ...H01L 21/28176 with a treatment, e.g. anne...H01L 21/28247 passivation or protection o...H01L 29/518 the insulating material con...
