Method of manufacturing a semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:
- forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed, the silicon nitride layer including a plurality of bonds formed between silicon and nitrogen;
breaking a portion of the bonds formed between silicon and nitrogen to form at least one free bonding site on a surface of the silicon nitride layer; and
using a silane compound and a flow fill method to form a silicon oxide layer on the silicon nitride layer.
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Abstract
A method of manufacturing a semiconductor device includes forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed. The silicon nitride layer includes a plurality of bonds formed between silicon and nitrogen. A portion of the bonds formed between silicon and nitrogen is broken to form at least one free bonding site on a surface of the silicon nitride layer. A silane compound and a flow fill method are used to form a silicon oxide layer on the silicon nitride layer.
245 Citations
22 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed, the silicon nitride layer including a plurality of bonds formed between silicon and nitrogen;
breaking a portion of the bonds formed between silicon and nitrogen to form at least one free bonding site on a surface of the silicon nitride layer; and
using a silane compound and a flow fill method to form a silicon oxide layer on the silicon nitride layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor device, the method comprising:
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forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed;
increasing the hydrophilicity of a surface of the silicon nitride layer; and
using a silane compound and a flow fill method to form a silicon oxide layer on the silicon nitride layer. - View Dependent Claims (14, 15, 16)
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17. A method of manufacturing a semiconductor device, the method comprising:
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forming a gate pattern on a semiconductor substrate;
forming a spacer on a side wall portion of the gate pattern;
forming a silicon nitride layer, the silicon nitride layer including a plurality of bonds formed between silicon and nitrogen;
breaking a portion of the bonds between silicon and nitrogen to form free bonding sites on a surface of the silicon nitride layer; and
using a silane compound and a flow fill method to form a silicon oxide layer on the silicon nitride layer. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification