Externally excited torroidal plasma source with magnetic control of ion distribution

• US 20030226641A1
• Filed: 06/05/2002
• Published: 12/11/2003
• Est. Priority Date: 08/11/2000
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Barnes, Michael S., Ye, Yan, Ramaswamy, Kartik, Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew, Nguyen, Huong Thanh
• Granted Patent: US 6,939,434 B2
• Time in Patent Office: Days
• US Class Current: 156/345.49
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation

Abstract

A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

Claims

1. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region; and

a magnet for controlling radial distribution of plasma ion density in said processing region, said magnet comprising an elongate pole-defining member having a pole axis intersecting said processing region.

2. The reactor of claim 1 wherein said pole-defining member is a permanently magnetized pole piece.

3. The reactor of claim 1 wherein said pole-defining member is a pole piece comprising a magnetizable material, said magnet further comprising:

an electrical conductor wound around said elongate pole piece to form a coil whereby current flow through said coil produces a magnetic field.

4. The reactor of claim 3 wherein said chamber enclosure includes a ceiling overlying and facing said workpiece support pedestal, said pole piece being at least partially external of and above said ceiling and extending at least partially into said ceiling and terminating outside of said chamber.

5. The reactor of claim 4 wherein said processing region is defined between parallel planes of said pedestal and ceiling, said pole axis being generally perpendicular to said workpiece support.

6. The reactor of claim 4 wherein said ceiling comprises a gas distribution plate.

7. The reactor of claim 6 wherein said gas distribution plate comprises a ceiling layer having gas inlet passages therethrough, a gas manifold layer, a gas mixing layer and a gas injection orifice layer, said pole piece having an upper section above said ceiling and a lower section inside said gas distribution plate, said coil being located around said upper section.

8. The reactor of claim 7 wherein said pole piece extends through said ceiling layer and said gas manifold layer and into said gas mixing layer, said lower section of said pole piece having a first diameter within said ceiling layer and a second diameter less than said first diameter within said gas manifold and mixing layers of said gas distribution plate.

9. The reactor of claim 1 further comprising a magnetic shield between said pole piece and said reentrant tube, said shield overlying and surrounding said magnet.

10. The reactor of claim 1 further comprising:

a second pair of ports through said enclosure near opposing sides of said processing region

a second external reentrant tube connected at respective ends thereof to said second pair of ports and overlying a portion of said first external reentrant tube;

a second RF power applicator coupled to said second reentrant tube for applying plasma source power to process gases within said second tube to produce a second reentrant torroidal plasma current through said second tube and across said processing region.

11. The reactor of claim 10 wherein said first tube forms an axial depression in a region underlying said second tube whereby said second tube is nested in said depression of said first tube.

12. The reactor of claim 11 wherein said first and second tubes are generally orthogonal to one another.

13. The reactor of claim 12 wherein said ports are in said ceiling whereby said tubes terminate axially into said ports.

14. The reactor of claim 12 wherein said ports are in said side wall whereby said tubes terminate radially into said ports.

15. The reactor of claim 12 wherein said magnet produces a radial magnetic field having a peak in a radial region corresponding generally to a radial distribution of a region of low plasma ion density in absence of said radial magnetic field.

16. The reactor of claim 12 wherein said pole piece is of a sufficiently small diameter to confine a region of maximum radial magnetic field of said pole piece near a center portion of said processing region.

17. The reactor of claim 16 wherein said center portion of said processing region corresponds to a region of low plasma ion density in absence of said radial magnetic field.

18. The reactor of claim 12 further comprising an RF power source coupled to said workpiece support pedestal for coupling RF bias power into said processing region.

19. The reactor of claim 1 wherein said pole piece is located below said workpiece support pedestal.

20. The reactor of claim 12 wherein processing region has a processing region diameter and each of said tubes has a width less than said processing region diameter, said reactor further comprising:

respective tube termination sections at respective ends of each of said tubes, each tube termination section having a width greater than the width of the respective tube;

respective plasma current flow splitters within respective tube termination sections, each splitter having a shape that promotes a widening of plasma current flow from the respective tube to the tube termination section of greater width.

21. The reactor of claim 20 wherein each said splitter has an apex facing toward the respective tube and a body extending away from said apex, said body having a sufficient length along a direction of plasma current flow to suppress formation of a region of concentrated plasma ion density near said termination section.

22. The reactor of claim 21 wherein said length is sufficiently limited to avoid imbalanced current flows on opposing sides of said splitter.

23. The reactor of claim 20 wherein said ports are in said ceiling whereby each termination section and plasma current flow near each splitter is axial.

24. The reactor of claim 20 wherein said ports are in said ceiling whereby each termination section and plasma current flow near each splitter is radial.

25. The reactor of claim 24 wherein said side wall is generally rectangular and each port is located at corner of said rectangular side wall.

26. The reactor of claim 25 wherein each splitter extends from a plane of said workpiece support to said ceiling.

27. The reactor of claim 26 wherein each splitter extends from a plane of said workpiece and only partially to said ceiling.

28. The reactor of claim 23 wherein the apex of each splitter is near a radially inner surface of the respective termination section, and wherein surfaces of the splitter facing radially outer surfaces of said termination section extend downwardly from said apex with a radially outward bias so as to force plasma current flow between opposing ports to travel on average a longer distance.

29. The reactor of claim 1 further comprising radial fins extending from said workpiece support pedestal to said side wall whereby to suppress plasma current flow between opposing ports through a pumping annulus between said pedestal and said side wall.

30. The reactor of claim 29 wherein said fins extend up to a plane of said workpiece support pedestal.

31. The reactor of claim 29 wherein said fins extend beyond a plane of said workpiece support.

32. The reactor of claim 1 wherein said first RF power applicator comprises:

an RF power source including an impedance match device;

a torroidal magnetically permeable core around a portion of said first tube;

a primary winding around a portion of said core connected across said RF power source.

33. The reactor of claim 32 further comprising:

a secondary winding around said core comprising plural groups of turns distributed azimuthally about said core.

34. The reactor of claim 33 wherein said plural groups of turns are evenly distributed about said core and are connected in parallel to one another, said reactor further comprising:

a pair of circular conductive buses extending congruently around opposite sides of said core, each respective bus being connected to a respective end of each of said groups of turns.

35. The reactor of claim 34 further comprising plural capacitors connected across said pair of buses and distributed azimuthally about said core, said capacitors sufficient to render said secondary winding resonant at a frequency of said RF power source.

36. The reactor of claim 1 wherein said first RF power applicator comprises:

an RF power source including an impedance match device;

a torroidal magnetically permeable core around a portion of said first tube;

a resonant winding around said core comprising plural groups of turns distributed azimuthally about said core, said resonant winding being coupled to said RF power source.

37. The reactor of claim 36 further comprising a primary winding around said core connected across said RF power source, said secondary winding being inductively coupled to said RF power generator through said core and said primary winding.

38. The reactor of claim 36 wherein said plural groups of turns are evenly distributed about said core and are connected in parallel to one another, said reactor further comprising:

a pair of circular conductive buses extending congruently around opposite sides of said core, each respective bus being connected to a respective end of each of said groups of turns.

39. The reactor of claim 38 further comprising plural capacitors connected across said pair of buses and distributed azimuthally about said core, said capacitors sufficient to render said secondary winding resonant at a frequency of said RF power source.

40. The reactor of claim 20 further comprising an insulator between said termination section and said side wall whereby said termination section and said splitter have an RF potential that follows oscillations of an RF potential of said plasma current.

41. The reactor of claim 7 wherein said gas distribution plate comprises radially inner and outer zones, said reactor further comprising dual gas feeds connected to respective ones of said inner and outer zones of said gas distribution plate.

42. A plasma reactor for processing a workpiece, said plasma reactor comprising:

an enclosure;

a workpiece support within the enclosure facing an overlying portion of the enclosure, said workpiece support and the overlying portion of said enclosure defining a process region therebetween extending generally across the diameter of said wafer support;

said enclosure having at least first and second openings therethrough near generally opposite sides of said workpiece support;

at least one hollow conduit outside of said process region and connected to said first and second openings, providing a first torroidal path extending through said conduit and across said process region;

a first RF power applicator coupled to the interior of said hollow conduit and capable of maintaining a plasma in said torroidal path; and

a magnet for controlling radial distribution of plasma ion density in said processing region, said magnet comprising an elongate pole piece defining a pole piece axis intersecting said processing region.

43. The reactor of claim 42 wherein said pole piece comprises a permanent magnet.

44. The reactor of claim 42 wherein said pole piece comprises a magnetizable material, said magnet further comprising:

an electrical conductor wound around said elongate pole piece to form a coil whereby current flow through said coil produces a magnetic field.

45. A plasma reactor for processing a workpiece, said plasma reactor comprising:

an enclosure;

a workpiece support within the enclosure facing an overlying portion of the enclosure, said workpiece support and the overlying portion of said enclosure defining a process region therebetween extending generally across the diameter of said wafer support;

said enclosure having at least first and second openings therethrough near generally opposite sides of said workpiece support;

at least one hollow conduit outside of said process region and connected to said first and second openings, providing a first torroidal path extending through said conduit and across said process region;

a first RF power applicator coupled to the interior of said one hollow conduit and capable of maintaining a plasma in said first torroidal path;

at least third and fourth openings therethrough near generally opposite sides of said workpiece support and disposed along an axis transverse to an axis of said first and second openings;

a second hollow conduit generally transverse to said one hollow conduit and disposed outside of said process region and connected to said third and fourth openings, whereby to provide a second closed torroidal path, said second torroidal path extending outside of said vacuum chamber through said second conduit and extending across said process region between said third and fourth openings in a direction transverse to said first torroidal path; and

a magnet for controlling radial distribution of plasma ion density in said processing region, said magnet comprising an elongate pole piece defining a pole piece axis intersecting said processing region.

46. The reactor claim 45 further comprising a second RF power applicator coupled to said second conduit and capable of maintaining a plasma in said second torroidal path.

47. The reactor of claim 45 wherein said pole piece comprises a permanent magnet.

48. The reactor of claim 45 wherein said pole piece comprises a magnetizable material, said magnet further comprising:

an electrical conductor wound around said elongate pole piece to form a coil whereby current flow through said coil produces a magnetic field.

49. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region;

wherein said processing region has a processing region diameter and each of said tubes has a width less than said processing region diameter, said reactor further comprising;

respective tube termination sections at respective ends of each of said tubes, each tube termination section having a width greater than the width of the respective tube;

respective plasma current flow splitters within respective tube termination sections, each splitter having a shape that promotes a widening of plasma current flow from the respective tube to the tube termination section of greater width.

50. The reactor of claim 49 wherein each said splitter has an apex facing toward the respective tube and a body extending away from said apex, said body having a sufficient length along a direction of plasma current flow to suppress formation of a region of concentrated plasma ion density near said termination section.

51. The reactor of claim 50 wherein said length is sufficiently limited to avoid imbalanced current flows on opposing sides of said splitter.

52. The reactor of claim 49 wherein said ports are in said ceiling whereby each termination section and plasma current flow near each splitter is axial.

53. The reactor of claim 49 wherein said ports are in said ceiling whereby each termination section and plasma current flow near each splitter is radial.

54. The reactor of claim 53 wherein said side wall is generally rectangular and each port is located at corner of said rectangular side wall.

55. The reactor of claim 54 wherein each splitter extends from a plane of said workpiece support to said ceiling.

56. The reactor of claim 55 wherein each splitter extends from a plane of said workpiece and only partially to said ceiling.

57. The reactor of claim 50 wherein the apex of each splitter is near a radially inner surface of the respective termination section, and wherein surfaces of the splitter facing radially outer surfaces of said termination section extend downwardly from said apex with a radially outward bias so as to force plasma current flow between opposing ports to travel on average a longer distance.

58. The reactor of claim 49 further comprising an insulator between said termination section and said side wall whereby said termination section and said splitter have an RF potential that follows oscillations of an RF potential of said plasma current.

59. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube, connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region;

wherein said processing region has a processing region diameter and each of said tubes has a width less than said processing region diameter, said reactor further comprising;

respective tube termination sections at respective ends of each of said tubes, each tube termination section having a width greater than the width of the respective tube; and

an insulator between said termination section and said side wall whereby said termination section and said splitter have an RF potential that follows oscillations of an RF potential of said plasma current.

60. The reactor of claim 59 further comprising:

respective plasma current flow splitters within respective tube termination sections, each splitter having a shape that promotes a widening of plasma current flow from the respective tube to the tube termination section of greater width.

61. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region;

wherein said first RF power applicator comprises;

an RF power source including an impedance match device;

a torroidal magnetically permeable core around a portion of said first tube;

a resonant winding around said core comprising plural groups of turns distributed azimuthally about said core, said resonant winding being coupled to said RF power source.

62. The reactor of claim 61 further comprising a primary winding around said core connected across said RF power source, said secondary winding being inductively coupled to said RF power generator through said core and said primary winding.

63. The reactor of claim 61 wherein said plural groups of turns are evenly distributed about said core and are connected in parallel to one another, said reactor further comprising:

a pair of circular conductive buses extending congruently around opposite sides of said core, each respective bus being connected to a respective end of each of said groups of turns.

64. The reactor of claim 63 further comprising plural capacitors connected across said pair of buses and distributed azimuthally about said core, said capacitors sufficient to render said secondary winding resonant at a frequency of said RF power source.

65. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region; and

radial fins extending from said workpiece support pedestal to said side wall whereby to suppress plasma current flow between opposing ports through a pumping annulus between said pedestal and said side wall.

66. The reactor of claim 65 wherein said fins extend up to a plane of said workpiece support pedestal.

67. The reactor of claim 66 wherein said fins extend beyond a plane of said workpiece support.

68. A plasma reactor comprising:

a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal, said chamber having at least a first pair of ports through said enclosure near opposing sides of said processing region;

a first external reentrant tube connected at respective ends thereof to said pair of ports;

process gas injection apparatus;

a first RF power applicator coupled to said reentrant tube for applying plasma source power to process gases within said tube to produce a first reentrant torroidal plasma current through said first tube and across said processing region;

said chamber enclosure comprising a gas distribution plate overlying and facing said workpiece support pedestal, said gas distribution plate comprising a ceiling layer having gas inlet passages therethrough, a gas manifold layer, a gas mixing layer and a gas injection orifice layer;

said gas distribution plate comprising radially inner and outer zones, said reactor further comprising dual gas feeds connected to respective ones of said inner and outer zones of said gas distribution plate.