Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element
First Claim
1. An apparatus for forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process, comprising a substrate and a high frequency applying electrode disposed in opposition to each other in each of the deposited film forming vessels, wherein the plurality of deposited film forming vessels including a first deposited film forming vessel having a first high-frequency applying electrode disposed so as to be distant by 10 mm±
- 5 mm from the substrate and a first means for applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz connected to the first high-frequency applying electrode, and a second deposited film forming vessel having a second high-frequency applying electrode disposed so as to be distant by 20 mm±
5 mm from the substrate and a second means for applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz connected to the second high-frequency applying electrode.
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Accused Products
Abstract
There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.
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Citations
10 Claims
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1. An apparatus for forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process, comprising a substrate and a high frequency applying electrode disposed in opposition to each other in each of the deposited film forming vessels, wherein the plurality of deposited film forming vessels including a first deposited film forming vessel having a first high-frequency applying electrode disposed so as to be distant by 10 mm±
- 5 mm from the substrate and a first means for applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz connected to the first high-frequency applying electrode, and a second deposited film forming vessel having a second high-frequency applying electrode disposed so as to be distant by 20 mm±
5 mm from the substrate and a second means for applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz connected to the second high-frequency applying electrode. - View Dependent Claims (2)
- 5 mm from the substrate and a first means for applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz connected to the first high-frequency applying electrode, and a second deposited film forming vessel having a second high-frequency applying electrode disposed so as to be distant by 20 mm±
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3. A method of forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process in a state such that the substrate and a high frequency applying electrode are disposed in opposition to each other in each of the deposited film forming vessels, the method comprising a first step of forming a deposited film while applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz through a first high-frequency applying electrode disposed so as to be distant by 10 mm±
- 5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±
5 mm from the substrate. - View Dependent Claims (4, 5, 6, 7)
- 5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±
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8. A semiconductor element comprising a silicon-based thin film formed on a substrate, the silicon-based thin film being formed by a method of forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process in a state such that the substrate and a high frequency applying electrode are disposed in opposition to each other in each of the deposited film forming vessels, comprising a first step of forming a deposited film while applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz through a first high-frequency applying electrode disposed so as to be distant by 10 mm±
- 5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±
5 mm from the substrate. - View Dependent Claims (9, 10)
- 5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±
Specification