Dielectric-coated electrode, plasma discharge treatment apparatus and method for forming thin film

• US 20030228416A1
• Filed: 06/05/2003
• Published: 12/11/2003
• Est. Priority Date: 06/11/2002
• Status: Active Grant

• Current Assignee: Konica Corporation (Konica Minolta Inc.)
• Original Assignee: Konica Corporation (Konica Minolta Inc.)
• Inventors: Iwamaru, Shunichi
• Granted Patent: US 7,281,491 B2
• Time in Patent Office: Days
• US Class Current: 427/200
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: C23C 30/00 Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process C23C26/00, C23C28/00 take precedence
• CPC Class Codes: C23C 4/18 After-treatment
• CPC Class Codes: H05H 1/2441 characterised by the physical-chemical properties of the dielectric, e.g. porous dielectric
• CPC Class Codes: H05H 1/473 Cylindrical electrodes, e.g. rotary drums
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction

Abstract

A dielectric-coated electrode having a conductive base material coated with a dielectric on a surface thereof, the dielectric including a first metal atom and a second metal atom. As for an ionic strength of the first metal atom and an ionic strength of the second metal atom according to a dynamic SIMS measurement, the ionic strength of the second metal atom is larger than the ionic strength of the first metal atom from the most surface of the dielectric toward a predetermined depth of the dielectric, and the ionic strength of the first metal atom is larger than the ionic strength of the second metal atom from the predetermined depth toward the surface of the conductive base material.

Claims

1. A dielectric-coated electrode comprising:

a conductive base material coated with a dielectric on a surface thereof,

the dielectric comprising;

a first metal atom; and

a second metal atom,

wherein as for an ionic strength of the first metal atom and an ionic strength of the second metal atom according to a dynamic SIMS measurement, the ionic strength of the second metal atom is larger than the ionic strength of the first metal atom from the most surface of the dielectric toward a predetermined depth of the dielectric, and the ionic strength of the first metal atom is larger than the ionic strength of the second metal atom from the predetermined depth of the dielectric toward the surface of the conductive base material.

2. The electrode of claim 1, wherein the predetermined depth is not less than 1 μ

m.

3. The electrode of claim 2, wherein the ionic strength of the second metal atom to the ionic strength of the first metal atom decreases from the most surface of the dielectric toward the predetermined depth of the dielectric.

4. The electrode of claim 1, wherein the first metal atom is Al, and the second metal atom is Si.

5. The electrode of claim 1, wherein the electrode is obtained by spraying a material containing the first metal atom onto the base material, and thereafter, sealing the material containing the first metal atom with a material containing the second metal atom.

6. The electrode of claim 5, wherein the material containing the first metal atom is alumina.

7. The electrode of claim 5, wherein the sealing is for applying the material containing the second metal atom to the surface of the sprayed electrode, and hardening the material containing the second metal atom according to sol-gel reaction.

8. The electrode of claim 7, wherein the hardened material containing the second metal atom is silicon oxide.

9. The electrode of claim 1, wherein a void fraction of the dielectric is not more than 10 volume %.

10. The electrode of claim 1, wherein a difference of a linear thermal expansion coefficient between the dielectric and the base material is not more than 10×

10<sup>−

6</sup>/°

C.

11. The electrode of claim 1, wherein a heat resistant temperature of the electrode is not less than 100°

C.

12. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 1.

13. The apparatus of claim 12, wherein each of the facing electrodes is the electrode of claim 1.

14. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 2.

15. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 3.

16. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 4.

17. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 5.

18. A plasma discharge treatment apparatus comprising:

facing electrodes;

a gas supply member for supplying a reactive gas between the facing electrodes; and

a power source for applying a high-frequency voltage between the facing electrodes,

wherein at least one of the facing electrodes is the electrode of claim 6.

19. A method for forming a thin film, comprising:

supplying a reactive gas between facing electrodes;

applying a high-frequency voltage between the facing electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging so as to make the reactive gas in a plasma state; and

supplying a substrate between the facing electrodes and exposing the substrate to the reactive gas in the plasma state so as to form the thin film on a surface of the substrate,

wherein at least one of the facing electrodes is the electrode of claim 1.

20. The method of claim 19, wherein each of the facing electrodes is the electrode of claim 1.