Test masks for lithographic and etch processes
First Claim
1. A method comprising generating a mask design for patterning a test wafer using a lithographic or etch process, characterizing the process based on the patterned test wafer, and using a pattern-dependent model based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.,
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Accused Products
Abstract
A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.
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Citations
13 Claims
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1. A method comprising
generating a mask design for patterning a test wafer using a lithographic or etch process, characterizing the process based on the patterned test wafer, and using a pattern-dependent model based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.,
Specification