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Test masks for lithographic and etch processes

  • US 20030229880A1
  • Filed: 12/17/2002
  • Published: 12/11/2003
  • Est. Priority Date: 06/07/2002
  • Status: Active Grant
First Claim
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1. A method comprising generating a mask design for patterning a test wafer using a lithographic or etch process, characterizing the process based on the patterned test wafer, and using a pattern-dependent model based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.,

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