Method of manufacturing of a monolithic silicon acceleration sensor

• US 20030229981A1
• Filed: 06/17/2002
• Published: 12/18/2003
• Est. Priority Date: 06/17/2002
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: VTI Holding Oy
• Inventors: Mahon, Geoffrey L.
• Granted Patent: US 6,862,795 B2
• Time in Patent Office: Days
• US Class Current: 29/594
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49007 Indicating transducer
• CPC Class Codes: Y10T 29/49126 Assembling bases
• CPC Class Codes: Y10T 29/49156 with selective destruction of conductive paths

Abstract

A method of manufacturing a monolithic silicon acceleration sensor is disclosed. The monolithic silicon acceleration sensor is micromachined from silicon to form one or more sensor cells, each sensor cell having an inertial mass positioned by beam members fixed to a silicon support structure. A sandwiched etch-stop layer is formed between a first silicon wafer section and a second silicon wafer section. A first section of the inertia mass and beam members are formed by etching a U-shaped channel and a bar-shaped channel in the first wafer section of the sandwiched layer to the etch-stop layer. A second section of the inertial mass is formed by aligning a frame-shaped channel in the second wafer section with the U-shaped channel and the bar-shaped channel in the first section, and etching the frame-shaped channel to the etch-stop layer. After stripping exposed etch-stop layer, an inertial mass positioned by beam members fixed to a silicon support structure is formed. A first cover plate structure is bonded to a first surface of the silicon support structure.

Claims

1. A method of manufacturing a monolithic silicon acceleration sensor comprising the step of forming at least one silicon acceleration sensor cell, the step of forming a sensor cell comprising the steps of:

(a) forming a layered sandwich of an etch-stop layer between a first wafer section of electrically conductive silicon having an exposed first surface and a second wafer section of electrically conductive silicon having an exposed second surface;

(b) forming a second section of a movable silicon inertial mass by etching a rectangular frame-shaped channel in the second wafer section of silicon from the exposed second surface extending to the etch-stop layer;

(c) forming a first section of the inertial mass by etching a U-shaped channel and a bar-shaped channel in the first wafer section of silicon from the exposed first surface extending to the etch-stop layer, positioning the bar-shaped channel and the U-shaped channel in the first wafer section of silicon to be in horizontal alignment with, and of equal planar dimensions to the rectangular frame-shaped channel in the second wafer section of silicon;

(d) stripping the etch-stop layer that is exposed by the etched frame-shaped channel, the etched U-shaped channel, and the etched bar-shaped channel, thereby creating a rectangular parallel piped-shaped inertial mass having a first and a second exposed surface, the inertial mass positioned by beam members fixed to a silicon support structure having a first and a second exposed surface; and

(e) providing a means for detecting movement of the inertial mass.

2. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming the layered sandwich comprises the steps of:

(a) growing a layer of silicon dioxide on one surface of a first silicon wafer section; and

(b) bonding a second silicon wafer section to the surface of the silicon dioxide layer.

3. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming the layered sandwich comprises the steps of:

(a) growing a layer of silicon dioxide on one surface of a first silicon wafer section;

(b) implanting ions below the surface of the silicon dioxide layer into the first silicon wafer section;

(c) bonding a second silicon wafer section to the surface of the silicon dioxide layer; and

(d) thermally shocking the resulting structure such that the first silicon wafer section is caused to be cleaved along the junction of the ion implantation and the remaining silicon of the first wafer section.

4. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming the layered sandwich comprises the steps of:

(a) growing a layer of silicon dioxide on one surface of a silicon wafer section;

(b) exposing a small area of the silicon wafer section through the silicon dioxide layer;

(c) thermally creating a puddle of molten silicon; and

(d) drawing the puddle of molten silicon onto the exposed surface of the silicon dioxide layer from the exposed area of the silicon wafer section such that a second wafer section of silicon is formed on the silicon dioxide layer when the molten silicon cools.

5. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming a layered sandwich further comprises:

(a) creating a multiplicity of electrical interconnection paths between the first wafer section of silicon and the second wafer section of silicon through the etch-stop layer; and

(b) patterning the interconnection paths in such a way that they will not interfere with any subsequent etching steps.

6. The method of manufacturing a monolithic silicon acceleration sensor according to claim 5, wherein the step of creating a multiplicity of electrical interconnection paths comprises the steps of:

(a) forming a multiplicity of small holes in the either the first wafer section of silicon or the second wafer section of silicon, extending to the etch-stop layer;

(b) removing the etch-stop layer exposed at the bottom of the small holes;

(c) depositing a conductive material such as polysilicon in the small holes, so that electrical connection is made between the first silicon wafer section and the second silicon wafer section through the small holes.

7. The method of manufacturing a monolithic silicon acceleration sensor according to claim 5, wherein the step of creating a multiplicity of electrical interconnection paths comprises the steps of:

(a) forming a multiplicity of small holes in either the first wafer section of silicon or in the second wafer section of silicon, extending to the etch-stop layer;

(b) removing the etch-stop layer exposed at the bottom of the small holes; and

(c) metallizing the surfaces of the holes, so that electrical connection is made between the first and second silicon wafer sections through the small metallized holes.

8. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming a layered sandwich comprises the steps of:

(a) growing dots of silicon nitride on a first surface of a second silicon wafer section in a pattern such that the dots will not interfere with any subsequent etching operations;

(b) growing a first layer of silicon dioxide on the remaining exposed silicon on the first surface of the second silicon wafer section;

(c) stripping off the first silicon dioxide layer so that a depression is formed in the first surface of the second silicon wafer section relative to the interface between the silicon and the dots of silicon nitride, thereby forming silicon mesas beneath the silicon nitride dots;

(d) growing a second silicon dioxide layer in the formed depression extending to a level corresponding to the interface between the silicon mesas and the silicon nitride dots;

(e) stripping off the silicon nitride dots such that a planar surface is formed by the second silicon dioxide layer interspersed with silicon mesa tops;

(f) bonding a first silicon wafer section to the formed planar surface of silicon dioxide interspersed with silicon mesa tops, such that the layered sandwich is formed where the first and second silicon wafer sections are electrically interconnected through the silicon dioxide layer via the mesas of silicon; and

(g) adjusting the thickness of the of the first silicon wafer to correspond to the desired thickness of the beam members by grinding off the first silicon wafer section.

9. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein:

(a) the step of forming the second section of an inertial mass is by dry etching a rectangular frame-shaped channel in the second wafer section of silicon extending from the exposed second surface to the etch-stop layer, the rectangular frame-shaped channel having a major and a minor dimension; and

(b) the step of forming the first section of an inertial mass comprises the steps of dry etching a U-shaped channel and a bar-shaped channel having a long dimension in the first wafer section of silicon, the channel extending from the exposed first surface to the etch-stop layer, the long dimension of the bar-shaped channel is aligned with the major dimension of the rectangular frame-shaped channel in the second wafer section of silicon, thus providing the capability of increasing the inertial mass by an increase in the major dimension without changing the inertial balance in the plane normal to the major dimension.

10. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming a second section of the inertial mass is by dry etching a square frame-shaped channel extending from the exposed second surface to the etch-stop layer, the square frame-shape channel having inside dimensions substantially equal to the thickness of the layered sandwich, so that a cube shaped inertial mass positioned by beam members is formed.

11. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the steps of:

adjusting the thickness of the beam members by adjusting the thickness the first wafer section of silicon;

(g) adjusting the width of the beam members by adjusting the spatial separation between the U-shaped channel and the bar-shaped channel; and

(h) adjusting the length of the beam members by adjusting the width of the etched channels.

12. The method of manufacturing a monolithic silicon acceleration sensor according to claim 11, wherein the step of adjusting the thickness of the beam members is performed by epitaxially growing silicon onto the exposed first surface of the first wafer section of silicon to a desired thickness.

13. The method of manufacturing a monolithic silicon acceleration sensor according to claim 11, wherein the step of adjusting the thickness of the beam members is performed by milling the exposed first surface of the first wafer section of silicon to a desired thickness.

14. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein:

(a) the step of forming the second section of the inertial mass further comprises creating a rectangular second depression on the exposed second surface of the second wafer section of silicon prior to etching the rectangular frame-shaped channel within the second depression; and

(b) the step of forming the first section of the inertial mass further comprises creating a rectangular first depression on the exposed first surface of the first wafer section of silicon prior to etching the U-shaped channel and the bar-shaped channel within the first depression.

15. The method of manufacturing of a monolithic silicon acceleration sensor according to claim 14, wherein the step of creating the rectangular first depression and the rectangular second depression comprises the steps of:

(a) rowing a first layer of silicon nitride on the exposed first surface of the first wafer section of silicon and a second layer of silicon nitride on the exposed second surface of the second wafer section of silicon;

(b) asking the first silicon nitride layer and the second silicon nitride layer thereby providing a first and a second exposed rectangular area for the rectangular depressions on the first layer of silicon nitride and on the second layer of silicon nitride;

(c) positioning the first and the second rectangular areas to be in horizontal alignment with each other;

(d) tripping the exposed first and second rectangular areas of silicon nitride so that first and second rectangular areas are exposed on the first wafer section of silicon and on the second wafer section of silicon, respectively;

(e) growing a layer of silicon dioxide on the exposed first and second rectangular areas of silicon;

(f) removing the masking on the silicon nitride layers; and

(g) stripping the exposed silicon nitride and the exposed silicon dioxide from the first and the second silicon wafer sections.

16. The method of manufacturing of a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming the first section of the inertial mass comprises the steps of:

(a) positioning the bar-shaped channel across the open top of the U-shaped channel and centering the bar-shaped channel within the outside dimension of the open top of the U-shaped channel;

(b) extending the length of the bar-shaped channel to equal the entire outside width of the open top of the U-shaped channel; and

(c) spatially separating the ends of the bar-shaped channel from the open top of the U-shaped channel, so that the inertial mass is positioned by torsion beam members.

17. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of forming the first section of the inertial mass comprises the steps of:

(a) positioning the bar-shaped channel across the open top of the U-shaped channel and centering the bar-shaped channel within the inside dimension of the open top of the U-shaped channel;

(b) extending the length of the bar-shaped channel to be less than the inside width of the open top of the U-shaped channel; and

(c) spatially separating the ends of the bar-shaped channel from the inside open top of the U-shaped channel, so that the silicon inertial mass is positioned by cantilever beam members.

18. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of providing a means to detect movement of the inertial mass comprises the steps of:

(a) measuring the capacitance between the first surface of the inertial mass and a first electrically conductive layer spaced from the first surface of the inertial mass, insulated from and fixed to the silicon support structure; and

(b) measuring the capacitance between the second surface of the inertial mass and a second electrically conductive layer spaced from the second surface of the inertial mass, insulated from and fixed to the silicon support structure.

19. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of providing a means to detect movement of the inertial mass comprises the steps of:

(a) growing a first layer of silicon dioxide on an exposed first surface of an electrically conductive third wafer section of silicon and a first layer of silicon dioxide on an exposed first surface of an electrically conductive fourth wafer section of silicon, the third and fourth silicon wafer sections having a second surface opposite the exposed first surface;

(b) masking the first silicon dioxide layer on the third and on the fourth silicon wafer sections so that the silicon dioxide surface is exposed except for a small post-shaped pattern such that the post-shaped pattern is positioned to coincide with the location of the inertial mass;

(c) stripping the silicon dioxide layer from the exposed silicon dioxide surfaces so that exposed areas of silicon are formed except for a post-shaped pattern of masked silicon dioxide on the first surface of the third and the fourth silicon wafer sections;

(d) etching the exposed areas of the third and the fourth silicon wafer sections to a depth of about 75 microns so that a small mesa of silicon is formed on the first surface of the third silicon wafer section beneath the post-shaped pattern and on the first surface of the fourth silicon wafer section beneath the post-shaped pattern;

(e) forming trenches on the first surface of the third and the fourth silicon wafer sections in a rectangular crosshatched pattern to a depth of about half of the third and fourth silicon wafer section thickness such that an enclosed rectangle contains at lease one silicon mesa and is positioned to coincide with the position of the inertial mass;

(f) melting a layer of glass over the first surface of the third and the fourth silicon wafer sections having the silicon mesa and trenches, such that the trenches are filled with glass and the silicon mesas are covered with glass;

(g) grinding the glass flat so that a planar glass surface is formed on the first surface of the third and the fourth silicon wafer sections, the planar glass surface having a silicon mesa pattern exposed;

(h) back grinding the second surface of the third and the fourth silicon wafer sections so that the glass-filled trenches are exposed and electrical isolation is formed within the rectangular crosshatched pattern, thereby forming a first cover plate structure from the third silicon wafer section and a second cover plate structure from the fourth silicon wafer section;

(i) metallizing a rectangular pattern layer on the glass first surface of the first and second cover plate structures so that the metallic layer is electrically connected to the opposite silicon surface by the silicon mesa, and sized and positioned to coincide with the first and second surfaces of the inertial mass;

(j) bonding the glass surface of the first cover plate structure to the first surface of the silicon support structure so that the metallized rectangular pattern layer is coincident with and spaced from the first surface of the inertial mass whereby a first variable capacitor is formed;

(k) bonding the glass surface of the second cover plate structure to the second surface of the silicon support structure so that the metallized rectangular pattern layer is coincident with and spaced from the second surface of the inertial mass whereby a second variable capacitor is formed; and

(l) providing means for electrical connecting the silicon wafer section of the first cover plate structure, the silicon support structure, and the silicon wafer section of the second cover plate structure to electronic circuitry for measuring the value of the first variable capacitor and the value of the second variable capacitor.

20. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of providing a means to detect movement of the inertial mass comprises the steps of:

(a) forming a small hole in a first glass layer and in a second glass layer at positions that coincide with the locations of the inertial mass, each glass layer having a first surface and a second surface;

(b) metallizing the surfaces of the small holes;

(c) metallizing a first rectangular layer on the first surface of the first glass layer and on the first surface of the second glass layer so that each metallic rectangular layer is electrically connected to the opposite second surface of the first and second glass layers by the metallized hole, and the metallic layers being sized and positioned to coincide with the first and second surfaces of the inertial mass;

(d) metallizing an electrical bonding pad on the second surface of the first and second glass layers so that each bonding pad is electrically connected to a corresponding rectangular metallic layer on the first surface of the first and second glass layers by the metallized holes;

(e) bonding the first surface of the first glass layer to the first surface of the silicon support structure so that the metallized rectangular layer is coincident with and spaced from the first surface of the inertial mass whereby a first variable capacitor is formed;

(f) bonding the first surface of the second glass layer to the second surface of the silicon support structure so that the metallized rectangular layer is coincident with and spaced from the second surface of the inertial mass whereby a second variable capacitor is formed; and

(g) providing means for electrical connecting the electrical bonding pad on the first glass layer, the silicon support structure, and the electrical bonding pad on the second glass layer to electronic circuitry for measuring the value of the first variable capacitor and the value of the second variable capacitor.

21. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, wherein the step of providing a means to detect movement of the inertial mass comprises the steps of:

(a) attaching piezoresistive elements to the beam members; and

(b) providing electrical connections from the piezoresistive elements to resistance measuring circuitry to determine the amount of twisting or bending of the beam members due to movement of the inertial mass in response to acceleration.

22. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the step of electrically interconnecting the first and second wafer sections of silicon by depositing a layer of conductive polysilicon over the surface of the etched structure, following the step of stripping the etch-stop.

23. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the step of forming a single monolithic silicon acceleration sensor cell for sensing planar acceleration.

24. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the steps of:

(a) forming a monolithic sensor comprising a first and a second silicon acceleration sensor cell for sensing two axes acceleration; and

(b) orienting the second sensor cell at a 90 degree or a 180 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference.

25. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the steps of:

(a) forming a monolithic sensor comprising a first, second, and a third silicon acceleration sensor cell for sensing three axes acceleration;

(b) orienting the second sensor cell at a 90 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference; and

(c) orienting the third sensor cell at a 180 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference.

26. The method of manufacturing a monolithic silicon acceleration sensor according to claim 1, further comprising the steps of:

(a) forming a monolithic comprising a first, second, third and a fourth silicon acceleration sensor cell for sensing three axes acceleration;

(b) orienting the second sensor cell at a 90 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference;

(c) orienting the third sensor cell at a 180 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference; and

(d) orienting the fourth sensor cell at a 270 degree angle to the first sensor cell when viewing the first surface of the inertial masses, using the beam members as an angular reference.