Substrate processing apparatus and semiconductor device producing method

• US 20030230562A1
• Filed: 02/28/2003
• Published: 12/18/2003
• Est. Priority Date: 03/27/2002
• Status: Active Grant

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Yoshimura, Tomohiro
• Granted Patent: US 6,790,687 B2
• Time in Patent Office: Days
• US Class Current: 219/405
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

A substrate processing apparatus includes a processing chamber which processes a substrate; a substrate supporting body which supports the substrate in the processing chamber; a heating member which heats the substrate and which is disposed on an opposite side from the substrate with respect to the substrate supporting body; a substrate temperature detecting device provided at a position opposed to a surface of the substrate; and a light-shielding member which shields stray light from the heating member and which is disposed around the substrate, wherein the light-shielding member has quartz members and an opaque member sandwiched between the quartz members.

Claims

1. A substrate processing apparatus, comprising:

a processing chamber which processes a substrate;

a substrate supporting body which supports said substrate in said processing chamber;

a heating member which heats said substrate and which is disposed on an opposite side from said substrate with respect to said substrate supporting body;

a substrate temperature detecting device provided at a position opposed to a surface of said substrate; and

a light-shielding member which shields stray light from said heating member and which is disposed around said substrate, wherein

said light-shielding member has quartz members and an opaque member sandwiched between said quartz members.

2. A substrate processing apparatus as recited in claim 1, wherein

said substrate supporting body comprises said quartz members.

3. A substrate processing apparatus as recited in claim 1, wherein

said opaque member is a coating of a material selected from the group consisting of SiC and Si.

4. A substrate processing apparatus as recited in claim 1, wherein

said opaque member is a SiC plate.

5. A substrate processing apparatus as recited in claim 1, wherein

said light-shielding member is provided at a portion of said substrate supporting body other than a region thereof where said substrate is placed.

6. A semiconductor device producing method, comprising producing a semiconductor device using a substrate processing apparatus as recited in claim 1.

7. A semiconductor device producing method, comprising:

mounting a substrate on a substrate supporting body disposed in a processing chamber;

heating said substrate by a heating member disposed on a first main surface side of said substrate;

monitoring a temperature of said substrate by a substrate temperature detecting device provided at a side of a second main surface of said substrate opposed to said first main surface of said substrate; and

shielding stray light from said heating member to said substrate temperature detecting device by a light-shielding member which includes quartz members and an opaque member sandwiched between said quartz members and which is disposed around said substrate.