Semiconductor module structure incorporating antenna

• US 20030230797A1
• Filed: 05/30/2003
• Published: 12/18/2003
• Est. Priority Date: 06/13/2002
• Status: Abandoned Application

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Mashino, Naohiro
• Application Number:
  US10/448,219
• Publication Number:
  US 20030230797A1
• Time in Patent Office: Days
• US Class Current: 257/686
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0407 Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40
• CPC Class Codes: H01Q 9/0421 with a shorting wall or a shorting pin at one end of the element H01Q9/0414 takes precedence
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/16 incorporating printed electric components, e.g. printed resistor, capacitor, inductor

Abstract

It is a task to reduce the length of an antenna by improving material of a module structure composing an antenna 3. A ferroelectric layer (2) is formed on the silicon board (1) and the antenna (3), composed of a conductor film, is formed on the ferroelectric layer (2). Through-holes (9) are formed on the silicon board (1). Electronic elements such as a capacitor (7), a SAW filter (8) and an inductance (6) are incorporated onto the silicon board (1) so as to compose a module structure.

Claims

1. A semiconductor module structure comprising:

a silicon board having first and second surfaces, a ferroelectric layer formed on at least a part of the first surface or the second surface of the silicon board; and

an antenna composed of a conductor film formed on the ferroelectric layer.

2. A semiconductor module structure, according to claim 1, wherein the ferroelectric layer is made of lead zirconate titanate (PZT).

3. A semiconductor module structure, according to claim 1, wherein electronic elements such as a capacitor, a SAW filter and an inductance are formed on the silicon board and incorporated into the module structure.

4. A semiconductor module structure, according to claim 3, wherein an electronic element has a coil-like configuration formed as a pattern on the silicon board.

5. A semiconductor module structure, according to claim 1, wherein a through-hole is formed in the silicon board, a conductor layer is formed on an inner wall face of the through-hole via an insulating layer, and the conductor layer is connected with conductor patterns provided on the first and second surfaces of the silicon board.

6. A semiconductor module structure according to claim 5, wherein a ground layer is formed on a lower layer of the inner wall face of the through-hole via a first insulating layer, a signal layer is formed on an upper face of the ground layer via a second insulating layer, and the ground layer and the signal layer are respectively connected with the ground layer and the signal pattern provided on the first and second surfaces of the silicon board.