VERY LOW VOLTAGE, HIGH EFFICIENCY PHOSPHORESCENT OLED IN A P-I-N STRUCTURE

• US 20030230980A1
• Filed: 06/18/2002
• Published: 12/18/2003
• Est. Priority Date: 06/18/2002
• Status: Abandoned Application

• Current Assignee: The Trustees of Princeton University (Princeton University)
• Original Assignee: The Trustees of Princeton University (Princeton University)
• Inventors: Pfeiffer, Martin, Forrest, Stephen R
• Application Number:
  US10/173,682
• Publication Number:
  US 20030230980A1
• Time in Patent Office: Days
• US Class Current: 313/600
• CPC Class Codes: H10K 2101/10 Triplet emission
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/14 Carrier transporting layers
• CPC Class Codes: H10K 50/155 comprising dopants
• CPC Class Codes: H10K 50/165 comprising dopants
• CPC Class Codes: H10K 50/18 Carrier blocking layers
• CPC Class Codes: H10K 50/181 Electron blocking layers
• CPC Class Codes: H10K 71/30 Doping active layers, e.g. electron transporting layers
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/611 Charge transfer complexes
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 Aromatic compounds comprising a hetero atom

Abstract

Abstract of the Disclosure

An organic light emitting device is provided, having a p-doped organic layer, an n-doped layer, and a phosphorescent emissive layer disposed between the p-doped and n-doped layers. Blocking layers are used to confine electrons, holes, and excitons in the emissive layer. A device having a cathode on the top is provided, as well as an "inverted"device having a cathode on the bottom.

Claims

1. An organic light emitting device, comprising:

(a)an anode disposed over a substrate;

(b)a p-doped organic layer disposed over and electrically connected to the anode;

(c)a phosphorescent organic emissive layer disposed over and electrically connected to the p-doped organic layer;

(d)an n-doped organic layer disposed over and electrically connected to the phosphorescent organic emissive layer; and

(e)a cathode disposed over and electrically connected to the n-doped organic layer,

(f)a first blocking layer disposed between and electrically connected to the p-doped organic layer and the emissive layer, the first blocking layer adapted to block electrons and excitons from entering the p-doped organic layer;

(g)a second blocking layer disposed between and electrically connected to the n-doped organic layer and the emissive layer, the second blocking layer adapted to block holes and excitons from entering the n-doped layer.

2. The device of claim 1, wherein the first and second blocking layers are not doped.

3. The device of claim 1, wherein the emissive layer is an intrinsic semiconductor.

4. The device of claim 1, wherein :

the first blocking layer comprises Ir(ppz)3;

the emissive layer comprises CBP;

Ir(ppy)3 (13;

1); and

the second blocking layer comprises BPhen.

5. An organic light emitting device, comprising:

(a)an anode disposed over a substrate;

(b)a p-doped organic layer disposed over and electrically connected to the anode;

(c)a phosphorescent organic emissive layer disposed over and electrically connected to the p-doped organic layer;

(d)an n-doped organic layer disposed over and electrically connected to the phosphorescent organic emissive layer; and

(e)a cathode disposed over and electrically connected to the n-doped organic layer,

(f)a blocking layer disposed between and electrically connected to the p-doped organic layer and the emissive layer, the blocking layer adapted to block electrons and excitons from entering the p-doped organic layer.

6. The device of claim 5, wherein the blocking layer is not doped.

7. An organic light emitting device, comprising:

(a)an anode disposed over a substrate;

(b)a p-doped organic layer disposed over and electrically connected to the anode;

(c)a phosphorescent organic emissive layer disposed over and electrically connected to the p-doped organic layer;

(d)an n-doped organic layer disposed over and electrically connected to the phosphorescent organic emissive layer; and

(e)a cathode disposed over and electrically connected to the n-doped organic layer; and

(f)a blocking layer disposed between and electrically connected to the n-doped organic layer and the emissive layer, the blocking layer adapted to block holes and excitons from entering the n-doped layer.

8. The device of claim 7, wherein the blocking layer is not doped.

9. An organic light emitting device, comprising:

(a)an organic phosphorescent emissive layer having first and second surfaces;

(b)a first blocking layer disposed adjacent to and electrically connected to the first surface of the emissive layer;

the first blocking layer being adapted to inject electrons into the emissive layer and to block holes and excitons from entering the first blocking layer;

(c)a second blocking layer disposed adjacent to and electrically connected to the second surface of the emissive layer;

the second blocking layer being adapted to inject holes into the emissive layer and to block electrons and excitons from entering the second blocking layer.

10. The device of claim 9, wherein the first and second blocking layers are not doped.

11. The device of claim 9, wherein :

the first blocking layer comprises Ir(ppz)3;

the emissive layer comprises CBP;

Ir(ppy)3 (13;

1); and

the second blocking layer comprises BPhen.

12. An organic light emitting device, comprising:

(a)a cathode disposed over a substrate;

(b)an n-doped organic layer disposed over and electrically connected to the cathode;

(c)an organic emissive layer disposed over and electrically connected to the first blocking layer;

(d)a p-doped organic layer disposed over and electrically connected to the second blocking layer; and

(e)an anode disposed over and electrically connected to the p-doped layer.

13. The device of claim 12, further comprising:

a blocking layer disposed between and electrically connected to the n-doped layer and the emissive layer, the blocking layer adapted to block holes and excitons from entering the n-doped layer;

14.The device of claim 12, further comprising;

a blocking layer disposed between and electrically connected to the p-doped layer and the emissive layer, the blocking layer adapted to block electrons and excitons from entering the p-doped layer.

14. 15.The device of claim 12, further comprising:

a first blocking layer disposed between and electrically connected to the n-doped layer and the emissive layer, the first blocking layer adapted to block holes and excitons from entering the n-doped layer; and

a second blocking layer disposed between and electrically connected to the p-doped layer and the emissive layer, the second blocking layer adapted to block electrons and excitons from entering the p-doped layer.

15. 16.The device of claim 12, wherein the organic emissive layer is a fluorescent emissive layer.

16. 17.The device of claim 12, wherein the organic emissive layer is a phosphorescent emissive layer.

19. 21.The device of claim 12, wherein the first and second blocking layers are not doped.

17. 18.The device of claim 17, further comprising:

a blocking layer disposed between and electrically connected to the n-doped layer and the emissive layer, the blocking layer adapted to block holes and excitons from entering the n-doped layer;

19.The device of claim 17, further comprising;

a blocking layer disposed between and electrically connected to the p-doped layer and the emissive layer, the blocking layer adapted to block electrons and excitons from entering the p-doped layer.

18. 20.The device of claim 17, further comprising:

a first blocking layer disposed between and electrically connected to the n-doped layer and the emissive layer, the first blocking layer adapted to block holes and excitons from entering the n-doped layer; and

a second blocking layer disposed between and electrically connected to the p-doped layer and the emissive layer, the second blocking layer adapted to block electrons and excitons from entering the p-doped layer.

20. 22.The device of claim 20, wherein :

the first blocking layer comprises BPhen;

the emissive layer comprises CBP;

Ir(ppy)3 (13;

1); and

the second blocking layer comprises Ir(ppz)3.

21. 23.An organic light emitting device, comprising:

(a)an anode;

(b)a p-doped layer disposed over and electrically connected to the anode, wherein the p-doped layer comprises m(50;

1);

(c)a first blocking layer disposed over and electrically connected to the p-doped layer, wherein the first blocking layer comprises Ir(ppz)3;

(d)a phosphorescent emissive layer disposed over and electrically connected to the first blocking layer, wherein the emissive layer comprises CBP;

Ir(ppy)3 (13;

1);

(e)a second blocking layer disposed over and electrically connected to the emissive layer, wherein the second blocking layer comprises BPhen;

(f)an n-doped layer disposed over and electrically connected to the second blocking layer, wherein the n-doped layer comprises BPhen*Li (1;

1); and

(g)a cathode disposed over and electrically connected to the n-doped layer.

23. 25.An organic light emitting device, comprising:

(a)a cathode;

(b)an n-doped layer disposed over and electrically connected to the cathode, wherein the n-doped layer comprises BPhen*Li (1;

1);

(c)a first blocking layer disposed over and electrically connected to the n-doped layer, wherein the first blocking layer comprises BPhen;

(d)an emissive layer disposed over and electrically connected to the first blocking layer, wherein the emissive layer comprises CBP;

Ir(ppy)3 (13;

1);

(e)a second blocking layer disposed over and electrically connected to the emissive layer, wherein the second blocking layer comprises Ir(ppz)3;

(f)a p-doped layer disposed over and electrically connected to the second blocking layer, wherein the p-doped layer comprises m_MTDATA;

F4(50;

1); and

(g)an anode disposed over and electrically connected to the p-doped layer.

22. 24.The device of claim 23, wherein:

(a)a thickness of the first blocking layer is at most about 100 Angstroms;

(b)a thickness of the emissive layer is at most about 50 Angstroms; and

(c)a thickness of the second blocking layer is at most about 250 Angstroms.

25. 27.An organic light emitting device made by the process of:

(a)providing an anode on a substrate;

(b)depositing a layer of m(50;

1) over the anode;

(c)depositing a layer of Ir(ppz)3 over the layer of m(50;

1);

(d)depositing a layer of CBP;

Ir(ppy)3 (13;

1) over the layer of Ir(ppz)3;

(e)depositing a layer of BPhen over the layer of Ir(ppy)3;

(f)depositing a layer of BPhen*Li (1;

1) over the layer of BPhen; and

(g)depositing a cathode over the layer of BPhen*Li (1;

1).

24. 26.The device of claim 25, wherein:

(a)a thickness of the first blocking layer is at most about 200 Angstroms;

(b)a thickness of the emissive layer is at most about 100 Angstroms; and

(c)a thickness of the second blocking layer is at most about 100 Angstroms.

27. 29.An organic light emitting device made by the process of:

(a)providing a cathode on a substrate;

(b)depositing a layer of BPhen*Li (1;

1) over the cathode;

(c)depositing a layer of BPhen over the layer of BPhen*Li (1;

1);

(d)depositing a layer of CBP;

Ir(ppy)3 (13;

1) over the layer of BPhen;

(e)depositing a layer of Ir(ppz)3 over the layer of CBP;

Ir(ppy)3 (13;

1);

(f)depositing a layer of m-MTDATA;

F4(50;

1) over the layer of Ir(ppz)3; and

(g)depositing an anode over the layer of m-MTDATA;

F4(50;

1).

26. 28.The device of claim 27, wherein:

(a)the layer of Ir(ppz)3 is deposited to a thickness of at most about 100 Angstroms;

(b)the layer of CBP;

Ir(ppy)3 (13;

1) is deposited to a thickness of at most about 50 Angstroms; and

(c)the layer of BPhen is deposited to a thickness of at most about 250 Angstroms.

29. 31.An organic light emitting device, comprising:

(a)a cathode disposed over a substrate;

(b)an n-doped organic layer disposed over and electrically connected to the cathode;

(c)a phosphorescent organic emissive layer disposed over and electrically connected to the first blocking layer;

(d)a p-doped organic layer disposed over and electrically connected to the second blocking layer; and

(e)an anode disposed over and electrically connected to the p-doped layer.

28. 30.The device of claim 29, wherein:

(a)the layer of BPhen is deposited to a thickness of at most about 200 Angstroms;

(b)the layer of CBP;

Ir(ppy)3 (13;

1) is deposited to a thickness of at most about 100 Angstroms; and

(c)the layer of Ir(ppz)3 is deposited to a thickness of at most about 100 Angstroms.

31. 33.The device of claim 31, wherein the drive voltage at 1,000 cd/m² is not more than about 2 volts higher than the photon energy of the emissive layer.

30. 32.The device of claim 31, wherein the drive voltage at 100 cd/m² is not more than about 1.5 volts higher than the photon energy of the emissive layer.

32. 34.The device of claim 31, wherein the drive voltage at 10,000 cd/m² is not more than about 4 volts higher than the photon energy of the emissive layer.

33. 35.An organic light emitting device, comprising:

(a)an anode disposed over a substrate;

(b)a p-doped organic layer disposed over and electrically connected to the anode;

(c)a phosphorescent organic emissive layer disposed over and electrically connected to the p-doped organic layer;

(d)an n-doped organic layer disposed over and electrically connected to the phosphorescent organic emissive layer; and

(e)a cathode disposed over and electrically connected to the n-doped organic layer.

35. 37.The device of claim 35, wherein the phosphorescent emissive layer is adapted to emit light having a peak wavelength greater than about 495 nm and less than or equal to about 580 nm, and wherein the power efficiency of the device is greater than about 20 lumens per watt at an intensity of about 1000 cd/m².

34. 36.The device of claim 35, wherein the phosphorescent emissive layer is adapted to emit light having a peak wavelength less than or equal to about 495 nm, and wherein the power efficiency of the device is greater than about 7 lumens per watt at an intensity of about 1000 cd/m².

36. 38.The device of claim 35, wherein the phosphorescent emissive layer is adapted to emit light having a peak wavelength greater than about 580 nm, and wherein the power efficiency of the device is greater than about 7 lumens per watt at an intensity of about 1000 cd/m².

37. 39.A phosphorescent OLED adapted to emit substantially white light having an intensity of at least about 100 cd/m² at a drive voltage of not greater than about 4 volts.

38. 40.A phosphorescent OLED adapted to emit substantially white light having an intensity of at least about 1,000 cd/m² at a drive voltage of not greater than about 4.5 volts.

39. 41.A phosphorescent OLED adapted to emit substantially white light having an intensity of at least about 100 cd/m² at a drive voltage of not greater than about 6.5 volts.