Microelectronic inductor structure with annular magnetic shielding layer

• US 20030231093A1
• Filed: 06/13/2002
• Published: 12/18/2003
• Est. Priority Date: 06/13/2002
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wong, Shyh-Chyi, Su, Jiong-Guang, Hsu, Heng-Ming
• Application Number:
  US10/171,212
• Publication Number:
  US 20030231093A1
• Time in Patent Office: Days
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances
• CPC Class Codes: H01F 27/36 Electric or magnetic shields or screens movable for varying inductance H01F21/10
• CPC Class Codes: H01F 27/366 made of ferromagnetic material
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors

Abstract

Within both a method for fabricating a microelectronic inductor structure, and the microelectronic inductor structure fabricated employing the method, there is formed over a substrate a spirally patterned conductor layer. Within both the method and the microelectronic inductor structure there is also formed over the substrate and annularly surrounding the spirally patterned conductor layer an annular magnetic shielding layer.

Claims

1. A method for fabricating an inductor structure comprising:

providing a substrate;

forming over the substrate a spirally patterned conductor layer which forms a planar spiral inductor; and

forming over the substrate such as to annularly surround the spirally patterned conductor layer an annular magnetic shielding layer.

2. The method of claim 1 wherein the spirally patterned conductor layer is formed to a thickness of from about 0.3 to about 10000 angstroms.

3. The method of claim 1 wherein the annular magnetic shielding layer is formed to a thickness of from about 10000 to about 50000 angstroms.

4. A method for fabricating an inductor structure comprising:

providing a substrate;

forming over the substrate a spirally patterned conductor layer which forms a planar spiral inductor; and

forming over the substrate such as to annularly surround the spirally patterned conductor layer an annular magnetic shielding layer formed of a ferromagnetic material.

5. The method of claim 4 wherein the spirally patterned conductor layer is formed to a thickness of from about 0.3 to about 10000 angstroms.

6. The method of claim 4 wherein the annular magnetic shielding layer is formed to a thickness of from about 10000 to about 50000 angstroms.

7. The method of claim 4 wherein the ferromagnetic material is selected from the group consisting of nickel cobalt alloys and iron, cobalt and nickel.

8. An inductor structure comprising:

a substrate;

a spirally patterned conductor layer formed over the substrate, where the spirally patterned conductor layer forms a planar spiral inductor; and

an annular magnetic shielding layer formed over the substrate and annularly surrounding the spirally patterned conductor layer.

9. The inductor structure of claim 8 wherein the spirally patterned conductor layer is formed to a thickness of from about 0.3 to about 10000 angstroms.

10. The inductor structure of claim 8 wherein the annular magnetic shielding layer is formed to a thickness of from about 10000 to about 50000 angstroms.

11. An inductor structure comprising:

a substrate;

a spirally patterned conductor layer formed over the substrate, where the spirally patterned conductor layer forms a planar spiral inductor; and

an annular magnetic shielding layer formed over the substrate and annularly surrounding the spirally patterned conductor layer, the annular magnetic shielding layer being formed of a ferromagnetic material.

12. The inductor structure of claim 11 wherein the spirally patterned conductor layer is formed to a thickness of from about 0.3 to about 10000 angstroms.

13. The inductor structure of claim 11 wherein the annular magnetic shielding layer is formed to a thickness of from about 10000 to about 50000 angstroms.

14. The inductor structure of claim 11 wherein the ferromagnetic material is selected from the group consisting of nickel cobalt alloys and iron, cobalt and nickel.