Please download the dossier by clicking on the dossier button x
×

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

  • US 20030234450A1
  • Filed: 06/19/2002
  • Published: 12/25/2003
  • Est. Priority Date: 10/25/2000
  • Status: Active Grant
First Claim
Patent Images

1. A dielectric material comprising elements of Si, C, O and H, said dielectric material having a covalently bonded tri-dimensional network structure and a dielectric constant of not more than 2.6.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×