Constant current source having a controlled temperature coefficient

• US 20030234638A1
• Filed: 06/19/2002
• Published: 12/25/2003
• Est. Priority Date: 06/19/2002
• Status: Active Grant

• Current Assignee: MediaTek, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Eshraghi, Aria, Wang, Xiaodong
• Granted Patent: US 6,737,849 B2
• Time in Patent Office: Days
• US Class Current: 323/315
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence
• CPC Class Codes: Y10S 323/907 Temperature compensation of semiconductor

Abstract

A bandgap circuit for producing a constant current having a controllable temperature coefficient. A current mirror supplies first and second substantially identical currents to first and second bipolar transistors. A first resistor is connected across the emitters of the bipolar transistors. A second resistor connects one to the bipolar emitters to a common terminal where the current source currents are recombined and supplied to a common terminal of a power supply. The band gap voltage produced at the common base connections of the bipolar transistors have a voltage temperature coefficient which is controlled by the values of the resistors. A current source is coupled to receive the bandgap voltage and produces a current having a temperature coefficient corresponding to the voltage temperature coefficient of the bandgap voltage.

Claims

1. A circuit for producing a current having a controllable temperature coefficient comprising:

a current mirror circuit for supplying from a first terminal of a power supply first and second currents;

first and second bipolar transistors having collector connections which receive respective of said first and second currents from said current mirror, and having base connections connected to each other and to said first bipolar transistor collector connection;

a first resistor connecting said bipolar transistors emitter connections together;

a second resistor connecting one of said bipolar transistors emitter connections to a common terminal of said power supply, said resistors having a values of resistance selected to produce a bandgap voltage at said base connections having a positive temperature coefficient; and

a current source connected to receive said bandgap voltage and produce a current proportional to said bandgap voltage.

2. The circuit according to claim 1 further comprising a third bipolar transistor having collector and emitter connections serially connecting said first transistor collector with said current mirror, and having a base connection connected to said third transistor collector and to an input of said current source.

3. A bandgap circuit for producing a current having a controlled temperature coefficient comprising:

a current mirror circuit, connected to a terminal of a voltage supply for producing first and second equal currents;

a start up circuit for establishing a start up condition for said current mirror circuit;

a first transistor having a collector and base connected to receive said first current;

second and third transistors having common base connections, a collector of said second transistor connected to receive a current from an emitter of said first transistor, a collector of said third transistor being connected to receive the second current;

a first resistor connected at one end to an emitter of said third transistor;

a second resistor connected at one end to a second end of said first resistor and to an emitter of said second transistor, and connected at a second end to a common terminal of said supply voltage;

said first and second resistors being selected to produce a bandgap voltage having a temperature coefficient proportional to the ratio of said first and second resistor values; and

a current source connected to said first transistor base whereby a current is produced having a temperature coefficient proportional to said bandgap voltage temperature coefficient.

4. The bandgap circuit according to claim 3 wherein said current mirror circuit comprises:

first and second FET transistors having a commonly connected gates, commonly connected sources connected to said terminal of said voltage supply;

said second FET transistor having a drain connection connected to said second FET transistor gate, said first and second FET transistor drain connections producing said first and second currents.

5. The bandgap circuit according to claim 4 wherein said gates and said first transistor drain are connected to said start up circuit.

6. The bandgap circuit according to claim 3 wherein said start up circuit comprises:

a mirror circuit having first and second current producing transistors having source connections connected to said common terminal;

a reference current transistor serially connected with said first current producing transistor and said voltage supply terminal;

a transistor serially connecting said mirror circuit first transistor with said voltage supply terminal, and connected from a gate connection to said third transistor collector; and

a transistor serially connected from said first transistor collector to said terminal of said power supply, and having a gate connected to said mirror circuit second current producing transistor.

7. The circuit according to claim 6 wherein said start up circuit current mirror comprises:

first and second FET transistors having source connections connected to said common terminal, and commonly connected gate connections, drain connections providing said first and second currents, and said second FET gate connection being connected to its drain connection.

8. The circuit according to claim 3 wherein said current mirror circuit comprises first and second FET transistors having source connections connected to said terminal of said voltage supply, and having commonly connected gate connections;

said first and second FET transistors having drain connections producing said first and second currents.

9. A current source having a controlled temperature coefficient comprising:

a bandgap circuit for generating a bandgap voltage having a controllable temperature coefficient from first and second currents, said bandgap circuit having first and second bipolar transistors with commonly connected bases connected to said second bipolar transistor collector, said first transistor having an first emitter resistor connected to an emitter of said second transistor, a second resistor connected to said second transistor emitter and to a common terminal for combining said first and second currents, said emitter resistor and said second resistor having values which define a temperature coefficient for said bandgap voltage; and

a current source having an input terminal connected to receive said bandgap voltage for producing a current proportional to said bandgap voltage.

10. The current source according to claim 9 wherein said bandgap circuit further comprises a transistor connected to couple said bandgap voltage to said current source input.

11. The current source according to claim 10 wherein said bandgap circuit includes a current mirror which supplies first and second currents to said bipolar transistors, said first current being connected through said transistor which couples said bandgap voltage to said current source.

12. The current source according to claim 9 wherein said bandgap circuit includes a start up circuit for placing said bandgap circuit in a stable state.

13. The current source according to claim 9 wherein said emitter resistor and resistor connecting said emitter to said common terminal are selected to provide a positive temperature coefficient for said bandgap voltage.