Anti-fuse sense amplifier

• US 20030234665A1
• Filed: 10/03/2002
• Published: 12/25/2003
• Est. Priority Date: 06/20/2002
• Status: Abandoned Application

• Current Assignee: MStar Semiconductor Incorporated (MediaTek, Inc.)
• Original Assignee: MStar Semiconductor Incorporated (MediaTek, Inc.)
• Inventors: Smith, Sterling, Yung, Henry Tin-Hang
• Application Number:
  US10/262,872
• Publication Number:
  US 20030234665A1
• Time in Patent Office: Days
• US Class Current: 326/37
• CPC Class Codes: G11C 17/18 Auxiliary circuits, e.g. for writing into memory

Abstract

An anti-fuse sensing circuit provided with no static current flowing in an anti-fuse sensing cell thereof. The sensing circuit comprises a switch and an inverter. The switch is operatively connected with an anti-fuse in series between a first power rail and a second power rail thereby forming a sensing node therebetween. The inverter is configured with an input operatively connected to the sensing node and an output operatively connected to the switch. Accordingly, the switch and the inverter constitute a feedback loop so as to sense that the anti-fuse is either un-programmed or programmed.

Claims

1. A sensing circuit for an anti-fuse, comprising:

a switch operatively connected with said anti-fuse in series between a first power rail and a second power rail thereby forming a sensing node therebetween; and

an inverter having an input operatively connected to said sensing node and an output operatively connected to said switch;

wherein said switch and said inverter constitute a feedback loop so as to sense that said anti-fuse is either un-programmed or programmed.

2. The sensing circuit as claimed in claim 1, further comprising a buffer operatively connected to the output of said inverter.

3. The sensing circuit as claimed in claim 2, wherein said buffer is a CMOS buffer.

4. The sensing circuit as claimed in claim 1, wherein said switch comprises an NMOS transistor having a drain connected to said sensing node, a source connected to said second power rail and a gate connected to the output of said inverter.

5. The sensing circuit as claimed in claim 1, wherein said switch comprises an PMOS transistor having a drain connected to said sensing node a source connected to said first power rail and a gate connected to the output of said inverter.

6. The sensing circuit as claimed in claim 1, wherein said inverter is a CMOS inverter.

7. A sensing circuit for an anti-fuse, comprising:

an NMOS switch transistor operatively connected with said anti-fuse in series between a first power rail and a second power rail thereby forming a sensing node therebetween; and

a CMOS inverter having an input operatively connected to said sensing node and an output operatively connected to a gate of said NMOS switch transistor.

8. The sensing circuit as claimed in claim 7, wherein said NMOS switch transistor has a drain operatively connected to said sensing node and a source operatively connected to said second power rail.

9. The sensing circuit as claimed in claim 7, wherein said CMOS inverter comprises:

a PMOS transistor having a source operatively connected to said first power rail and a gate operatively connected to said sensing node; and

an NMOS transistor having a source operatively connected to said second power rail and a gate operatively connected to said sensing node;

wherein drains of said PMOS transistor and said NMOS transistor are operatively connected to the gate of said NMOS switch transistor.

10. The sensing circuit as claimed in claim 7, further comprising a CMOS buffer operatively connected to the output of said CMOS inverter.

11. The sensing circuit as claimed in claim 10, wherein said buffer comprises:

a PMOS transistor having a source operatively connected to said first power rail and a gate operatively connected to the output of said inverter; and

an NMOS transistor having a source operatively connected to said second power rail and a gate operatively connected to the output of said inverter;

wherein drains of said PMOS transistor and said NMOS transistor are tied to form an output node.

12. A sensing circuit for an anti-fuse, comprising:

a PMOS switch transistor operatively connected with said anti-fuse in series between a first power rail and a second power rail thereby forming a sensing node therebetween; and

a CMOS inverter having an input operatively connected to said sensing node and an output operatively connected to a gate of said PMOS switch transistor.

13. The sensing circuit as claimed in claim 12, wherein said PMOS switch transistor has a drain operatively connected to said sensing node and a source operatively connected to said first power rail.

14. The sensing circuit as claimed in claim 12, wherein said CMOS inverter comprises:

a PMOS transistor having a source operatively connected to said first power rail and a gate operatively connected to said sensing node; and

an NMOS transistor having a source operatively connected to said second power rail and a gate operatively connected to said sensing node;

wherein drains of said PMOS transistor and said NMOS transistor are operatively connected to the gate of said PMOS switch transistor.

15. The sensing circuit as claimed in claim 12, further comprising a CMOS buffer operatively connected to the output of said CMOS inverter.

16. The sensing circuit as claimed in claim 15, wherein said buffer comprises:

a PMOS transistor having a source operatively connected to said first power rail and a gate operatively connected to the output of said inverter; and

an NMOS transistor having a source operatively connected to said second power rail and a gate operatively connected to the output of said inverter;

wherein drains of said PMOS transistor and said NMOS transistor are tied to form an output node.