Manufacturing method for a semiconductor device
First Claim
1. A manufacturing method for a semiconductor device having thin film transistors comprising:
- forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation;
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light.
1 Assignment
0 Petitions
Accused Products
Abstract
Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.
-
Citations
16 Claims
-
1. A manufacturing method for a semiconductor device having thin film transistors comprising:
-
forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film; and
selectively irradiating a laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation;
a direction in which the laser light is moved on the amorphous semiconductor film is parallel to a direction in which carriers move in channel formation regions in the thin film transistors; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A manufacturing method for a semiconductor device having thin film transistors comprising:
-
forming an amorphous semiconductor film on an insulating surface;
forming a marker on the amorphous semiconductor film;
determining a direction in which a spot of a laser light is moved so as to be parallel to a direction in which carriers move in channel formation regions of the thin film transistors, based on information on arrangement of the thin film transistors with the marker used as a reference; and
selectively irradiating the laser light to perform crystallization to a region in which active layers of the thin film transistors are formed, based on information on arrangement of the thin film transistors with the marker used as a reference, wherein;
the laser light is a laser light of pulse oscillation; and
the amorphous semiconductor film is melted over entire thickness thereof through irradiation of the laser light. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
Specification