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Silicon oxide etching compositions with reduced water content

  • US 20030235986A1
  • Filed: 06/20/2002
  • Published: 12/25/2003
  • Est. Priority Date: 06/20/2002
  • Status: Abandoned Application
First Claim
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1. A silicon oxide etching solution consisting essentially of the product of at least one bifluoride source compound dissolved in a solvent consisting of about 90% to 100% by weight of one or more carboxylic acids and 0 to about 10% by weight of water, wherein the total bifluoride source compound concentration is between about 1.25 and about 5.0 moles per kilogram of solvent.

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