Silicon oxide etching compositions with reduced water content
First Claim
1. A silicon oxide etching solution consisting essentially of the product of at least one bifluoride source compound dissolved in a solvent consisting of about 90% to 100% by weight of one or more carboxylic acids and 0 to about 10% by weight of water, wherein the total bifluoride source compound concentration is between about 1.25 and about 5.0 moles per kilogram of solvent.
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Abstract
Silicon oxide etching solutions consisting essentially of the product of at least one bifluoride source compound dissolved in a solvent consisting of about 90% to 100% by weight of at least one carboxylic acid and 0 to about 10% by weight water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.
16 Citations
27 Claims
- 1. A silicon oxide etching solution consisting essentially of the product of at least one bifluoride source compound dissolved in a solvent consisting of about 90% to 100% by weight of one or more carboxylic acids and 0 to about 10% by weight of water, wherein the total bifluoride source compound concentration is between about 1.25 and about 5.0 moles per kilogram of solvent.
- 20. A method for the preparation of an ammonium bifluoride etching solution that is essentially free of acid amides, said method comprising the step of reacting an aqueous solution of ammonium fluoride with an acid anhydride at a temperature below that at which carboxylic acid amide formation occurs.
Specification