Memory structures
First Claim
Patent Images
1. A memory structure comprising:
- a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a control element disposed between the second electrode and the first electrode.
4 Assignments
0 Petitions
Accused Products
Abstract
A memory structure that includes a first electrode, a second electrode, a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode, a memory storage element disposed between the thermal conduction limiting electrode and the second electrode, and a control element disposed between the second electrode and the first electrode.
-
Citations
44 Claims
-
1. A memory structure comprising:
-
a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a control element disposed between the second electrode and the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
25. A memory structure comprising:
-
a first electrode;
a second electrode;
a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode;
a tunnel junction memory storage element disposed between the thermal conduction limiting electrode and the second electrode; and
a tunnel junction control element disposed between the second electrode and the first electrode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
-
-
40. A memory structure comprising:
-
a first electrode;
a second electrode;
means for electrically conducting and limiting thermal conduction;
a memory storage element disposed between said means for electrically conducting and the second electrode; and
a control element disposed between the second electrode and the first electrode.
-
-
41. A method of making a memory structure comprising:
-
creating a first electrode;
forming a control element on the first electrode;
creating a second electrode;
forming a control element on the second electrode;
creating a thermal conduction limiting electrode having a thermal conductivity that is less than a thermal conductivity of the first electrode. - View Dependent Claims (42, 43, 44)
-
Specification