Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same

• US 20040002572A1
• Filed: 03/19/2003
• Published: 01/01/2004
• Est. Priority Date: 09/22/2000
• Status: Active Grant

• Current Assignee: Sumitomo Bakelite Company Limited
• Original Assignee: Sumitomo Bakelite Company Limited
• Inventors: Saito, Hidenori, Higashida, Nobuhiro, Ishida, Yuichi, Enoki, Takashi
• Granted Patent: US 7,049,371 B2
• Time in Patent Office: Days
• US Class Current: 524/606
• CPC Class Codes: C08G 69/48 Polymers modified by chemical after-treatment
• CPC Class Codes: C08G 81/00 Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers involving only carbon-to-carbon unsaturated bond reactions C08F299/00 ; polyester-amides C08G69/44; polyester-imides C08G73/16; polyamides-imides C08G73/14; block- or graft polymers containing polysiloxane sequences C08G77/42
• CPC Class Codes: C08J 2377/00 Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain of polyhydrazides C08J2379/06; of polyamide-imides or polyamide acids C08J2379/08; Derivatives of such polymers
• CPC Class Codes: C08J 5/18 Manufacture of films or sheets
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H05K 3/4676 Single layer compositions

Abstract

A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

Claims

1. A material for an insulating film which comprises, as a component forming the film, a copolymer obtained by reacting a polyamide represented by following general formula [1] with a reactive oligomer having a substituent which can react with carboxyl group, amino group or hydroxyl group in a structure of the polyamide;

2. A material for an insulating film according to claim 1, wherein the polyamide is represented by general formula [1] in which Y represents a divalent group selected from the groups represented by formulae (B).

3. A material for an insulating film according to claim 1, wherein the polyamide is represented by general formula [1] in which Y represents a divalent group selected from the groups represented by formulae (C).

4. A material for an insulating film according to claim 1, wherein the polyamide is represented by general formula [1] in which Y represents a divalent group selected from the groups represented by formulae (D).

5. A material for an insulating film according to claim 1, wherein the polyamide is represented by general formula [1] in which Y represents a divalent group selected from the groups represented by formula (E).

6. A material for an insulating film according to claim 1, wherein the reactive oligomer is at least one oligomer selected from polyoxyalkylenes, polymethyl methacrylate, poly-α

-methylstyrene, polystyrene, polyesters, polyether esters, polycaprolactone and polyurethanes.

7. A material for an insulating film according to claim 1, wherein the reactive oligomer has a number-average molecular weight in a range of 100 to 40,000.

8. A material for an insulating film according to claim 7, wherein the reactive oligomer has a number-average molecular weight in a range of 100 to 20,000.

9. A material for an insulating film according to claim 8, wherein the reactive oligomer has a number-average molecular weight in a range of 100 to 10,000.

10. A material for an insulating film according to claim 1, wherein the copolymer comprises 5 to 70% by weight of a unit of the reactive oligomer.

11. A material for an insulating film according to claim 10, wherein the copolymer comprises 5 to 50% by weight of a unit of the reactive oligomer.

12. A material for an insulating film according to claim 11, wherein the copolymer comprises 5 to 40% by weight of a unit of the reactive oligomer.

13. A coating varnish for an insulating film which comprises a material for an insulating film described in claim 1 and an organic solvent in which the material for an insulating film can be dissolved or dispersed.

14. An insulating film which comprises a layer of a resin comprising a polybenzoxazole as a main structure and has fine pores, wherein the polybenzoxazole is obtained by treating a material for an insulating film described in claim 1 or a coating varnish for an insulating film described in claim 13 by heating so that condensation reaction and crosslinking reaction take place.

15. An insulating film according to claim 14, wherein the fine pores in the insulating film have diameters of 1 μ

m or smaller.

16. An insulating film according to claim 15, wherein the fine pores in the insulating film have diameters of 500 nm or smaller.

17. An insulating film according to claim 16, wherein the fine pores in the insulating film have diameters of 100 nm or smaller.

18. An insulating film according to claim 17, wherein the fine pores in the insulating film have diameters of 20 nm or smaller.

19. An insulating film according to claim 14, wherein the insulating films has a fraction of pores of 5 to 70%.

20. An insulating film according to claim 19, wherein the insulating films has a fraction of pores of 5 to 50%.

21. An insulating film according to claim 20, wherein the insulating films has a fraction of pores of 5 to 40%.

22. An insulating film according to claim 14, which is used as an insulating interlayer film for multi-layer wiring in semiconductors.

23. An insulating film according to claim 14, which is used as a surface protective film of semiconductors.

24. A semiconductor device which comprises at least one of an insulating interlayer film for multi-layer wiring comprising an insulating film which is described in claim 22 and a surface protective film comprising an insulating film which is described in claim 23.