Semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate having a predetermined substrate resistivity;
a device region formed in the semiconductor substrate;
impurity diffusion regions formed in the device region;
an inductor element formed on a first surface of the semiconductor substrate; and
a high resistance region formed in the semiconductor substrate facing the inductor element, said high resistance region having a resistivity higher than that of the semiconductor substrate.
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Abstract
There is provided a semiconductor device able to prevent performance degradation of an inductor element provided thereon. A high resistance region is provided below the inductor element formed on the semiconductor substrate. The high resistance region is formed deeper than the well regions of the p-channel and n-channel MOS transistors, thus preventing induction of an eddy current by the magnetic flux generated from the inductor element.
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Citations
10 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having a predetermined substrate resistivity;
a device region formed in the semiconductor substrate;
impurity diffusion regions formed in the device region;
an inductor element formed on a first surface of the semiconductor substrate; and
a high resistance region formed in the semiconductor substrate facing the inductor element, said high resistance region having a resistivity higher than that of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for producing a semiconductor device, comprising the steps of:
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forming a high resistance region in a semiconductor substrate, said high resistance region having a resistivity higher than that of the semiconductor substrate;
forming a transistor in a device region formed around the high resistance region; and
forming an inductor element on the high resistance region, wherein in the step of forming a transistor, the high resistance region is masked when implanting impurity elements to the device region.
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Specification