Method and apparatus for endpoint detection
First Claim
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1. A method for endpoint detection in chemical mechanical planarization of a substrate having a first layer of material and a second layer of material, wherein the second layer of material has an exposed surface that is planarized by a method comprising:
- (a) placing a target at or near a location between the first layer of material and the second layer of material;
(b) planarizing the second layer of material to remove at least a portion of material from the second layer;
(c) detecting the target; and
(d) adjusting said planarizing step in response to detecting the target.
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Abstract
This invention relates to methods of detecting a planarization endpoint in chemical mechanical planarization of a substrate wherein a detectable target is located at the endpoint and then detected during the CMP planarization. The invention also relates to layered substrates that contain a detectable target located between a first layer of material and a second layer of material. The invention also relates to methods of chemical mechanical planarization of a substrate.
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Citations
46 Claims
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1. A method for endpoint detection in chemical mechanical planarization of a substrate having a first layer of material and a second layer of material, wherein the second layer of material has an exposed surface that is planarized by a method comprising:
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(a) placing a target at or near a location between the first layer of material and the second layer of material;
(b) planarizing the second layer of material to remove at least a portion of material from the second layer;
(c) detecting the target; and
(d) adjusting said planarizing step in response to detecting the target. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of chemical mechanical planarization of a wafer, comprising:
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(a) placing the wafer in contact with a polishing substrate, wherein the wafer comprises a first layer of material, a second layer of material and a target placed at or near a location between the first layer of material and the second layer of material;
(b) applying pressure against the backside of the substrate;
(c) causing relative motion between the wafer and the polishing substrate;
(d) depositing a polishing composition onto the polishing substrate;
(e) planarizing the wafer by removing material from the second layer; and
(f) adjusting the planarization step in response to detecting the target. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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- 26. A substrate comprising a first layer of material, a second layer of material and a target placed at or near a location between the first layer of material and the second layer of material.
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36. A method of detecting an event during chemical mechanical planarization of a substrate having a lower layer of material and an upper layer of material, comprising:
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placing a first target having a first distinguishable characteristic at or near a first event on the substrate, wherein the first target is encoded for the first event;
placing a second target having a second distinguishable characteristic at or near a second event on the substrate, wherein the second target is encoded for the second event;
planarizing the upper layer of material to remove at least a portion of material from the upper layer;
observing the first or second target; and
adjusting the planarization step in response to observing the first or second target. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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Specification