Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method

• US 20040007180A1
• Filed: 07/10/2003
• Published: 01/15/2004
• Est. Priority Date: 07/10/2002
• Status: Abandoned Application

• Current Assignee: SPX Dock Products, Inc. (Assa Abloy AB)
• Original Assignee: Tokyo Electron Limited
• Inventors: Kawano, Yumiko, Yamasaki, Hideaki
• Application Number:
  US10/615,926
• Publication Number:
  US 20040007180A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: G05D 11/138 by sensing the concentration of the mixture, e.g. measuring pH value

Abstract

A film-formation apparatus includes a film-formation chamber and a source gas supplying apparatus supplying a source gas to the film-formation chamber together with a carrier gas, wherein the source gas supplying apparatus includes a concentration detector detecting a concentration of the source gas and a gas flow controller controlling a flow rate of an inert gas added to the carrier gas based on a result of measurement of the concentration of the source gas obtained by the concentration detector.

Claims

1. A film-formation apparatus, comprising:

a film-formation chamber; and

a source gas supplying apparatus supplying a source gas to said film-formation chamber together with a carrier gas,

said source gas supplying apparatus comprising;

a concentration detector detecting a concentration of said source gas; and

a gas flow controller controlling a flow rate of an inert gas added to said carrier gas based on a result of measurement of said concentration of said source gas obtained by said concentration detector.

2. A film-formation apparatus as claimed in claim 1, wherein said inert gas is added to said carrier gas that is carrying said source gas.

3. A film-formation apparatus as claimed in claim 1, wherein said concentration detector is provided so as to measure said concentration of said source gas in the state said inert gas is added to said carrier gas.

4. A film-formation apparatus as claimed in claim 1, wherein said gas flow controller changes said flow rate of said inert gas added to said carrier gas such that said concentration of said source gas as measured by said concentration detector falls in a predetermined concentration range.

5. A film-formation apparatus as claimed in claim 1, wherein said concentration detector measures said concentration of said source gas before commencement of a film-formation process and/or during said film-formation process.

6. A film-formation apparatus as claimed in claim 1, wherein said source gas supplying apparatus further includes a switching device switching a flow path of said carrier gas added with said inert gas, between a first path connected to said film-formation chamber and a second path bypassing said film-formation chamber, said concentration detector being provided in one of said first and second flow paths.

7. A film-formation apparatus as claimed in claim 1, wherein said gas flow controller changes a flow rate of said inert gas to be added to said carrier gas, and wherein said gas flow controller further changes a flow rate of said carrier gas such that a total flow rate of said carrier gas and said inert gas is maintained generally constant.

8. A film-formation apparatus as claimed in claim 1, wherein said carrier gas and said inert gas are introduced from an identical flow path, said inert gas being then diverted to another flow path before said carrier gas is admixed with said source gas, said inert gas merging again with said flow path of said carrier gas after said carrier gas is admixed with said inert gas.

9. A film-formation apparatus as claimed in claim 1, wherein said gas flow controller controls a flow rate of said inert gas in said another flow path.

10. A film-formation apparatus as claimed in claim 1, wherein said source gas is formed by vaporizing a source material of which vapor pressure less than 266 Pa at a temperature at which said source material is used.

11. A film-formation apparatus as claimed in claim 1, wherein said source gas is W(CO)₆.

12. A film-formation apparatus as claimed in claim 1, wherein said concentration detector is a Fourier transform infrared spectrometer.

13. A source supplying system of a film-formation apparatus, comprising:

a concentration detector detecting a concentration of said source gas; and

a gas flow controller controlling a flow rate of an inert gas added to said carrier gas based on a result of measurement of said concentration of said source gas obtained by said concentration detector.

14. A film-formation apparatus, comprising:

a film-formation chamber; and

a source gas supplying apparatus supplying a source gas to said film-formation chamber together with a carrier gas via a gas passage in the form of a mixed gas,

said source supplying apparatus comprising;

a gas concentration measurement part measuring the concentration of said source gas contained in said mixed gas in said gas passage;

a gas concentration controller connected to said gas passage, said gas concentration controller adding an inert gas to said mixed gas in said gas passage; and

an inert-gas flow-rate controller controlling the flow rate of said inert gas added by said gas concentration controller based on a measured concentration of said source gas obtained by said gas concentration measurement part,

said gas concentration measurement part including a manometer for measuring the pressure of said mixed gas in said gas passage, said gas concentration measurement part correcting said measured concentration of said source gas based on a pressure measured by said manometer.

15. A film-formation apparatus as claimed in claim 14, wherein said gas concentration measurement part includes a gas concentration detector that supplies a probe signal to said mixed gas in said gas passage, said gas concentration detector producing a detection signal corresponding to said concentration of said source gas based upon said probe signal passed through said mixed gas,

said gas concentration measurement part further including a signal processing unit correcting said signal obtained by said gas concentration detector by said pressure and calculating an absolute concentration of said source gas in said mixed gas from said signal corrected by said pressure.

16. A film-formation apparatus as claimed in claim 15, wherein said signal processing unit multiplies a correction term, which includes said pressure of said mixed gas at a denominator, to a value of said signal detected by said gas concentration detector.

17. A film-formation apparatus as claimed in claim 15, wherein said manometer is provided at any of an upstream side and a downstream side of said gas concentration detector.

18. A film-formation apparatus s claimed in claim 14, wherein said concentration measurement part measures said concentration of said source gas in said gas passage at a downstream side of a location where said inert gas is admixed to said mixed gas.

19. A film-formation apparatus as claimed in claim 14, wherein said concentration measurement part measures said concentration of said source gas in said gas passage at an upstream side of a location where said inert gas is added to said mixed gas.

20. A film-formation apparatus as claimed in claim 15, wherein said gas concentration detector injects infrared light to said mixed gas and produces said signal based upon an infrared absorption spectrum of said infrared light passed through said mixed gas.

21. A film-formation apparatus as claimed in claim 15, wherein said gas concentration detector comprises a Fourier transform infrared spectrometer.

22. A film-formation apparatus as claimed in claim 14, wherein said gas concentration detector comprises a non-dispersion infrared spectrometer.

23. A film-formation apparatus as claimed in claim 20, wherein said gas concentration detector comprises a mirror disposed in said gas passage and a heating element heating said mirror.

24. A film-formation apparatus as claimed in claim 14, wherein said mixed gas has a pressure of 1.33 kPa or less in said gas passage.

25. A method of detecting a gas concentration, comprising the steps of:

supplying a mixed gas containing therein a source gas to a flow passage;

measuring the pressure of said mixed gas in said flow passage;

injecting infrared light to said mixed gas in said flow passage;

acquiring an absorption spectrum of said source gas by detecting said infrared light after said infrared light has passed through said mixed gas in said flow passage;

acquiring the concentration of said source gas in said mixed gas by correcting an intensity of said absorption spectrum, said step of correction comprising the step of applying a correction term including therein said pressure.

26. A method as claimed in claim 25, wherein said correction term includes a term of said pressure at a denominator.

27. A method as claimed in claim 25, wherein said step of injecting said infrared light is conducted by using an interferometer capable of changing a baseline length and by changing said baseline length.

28. A method as claimed in claim 25, wherein said step of acquiring said absorption spectrum includes fast Fourier-transform processing.

29. A method as claimed in claim 25, wherein any of said step of injecting said infrared light and said step of detecting said infrared light includes the step of interrupting said infrared light intermittently at an upstream side, in an optical path of said infrared light, of a detector used for detecting said infrared light.