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Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor

  • US 20040007722A1
  • Filed: 07/11/2003
  • Published: 01/15/2004
  • Est. Priority Date: 03/17/2000
  • Status: Active Grant
First Claim
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1. A back-illuminated image sensor comprising:

  • a semiconductor base of a first conductive type;

    a plurality of charge accumulating units of a second conductive type different from said first conductive type, formed on a second-plane side which is the backside of a first plane of said semiconductor base, said charge accumulating units which accumulate, on a pixel-by-pixel basis, signal charges generated by an energy ray incident from the second-plane side;

    a charge transfer unit formed on the first-plane side of said semiconductor base facing said charge accumulating units, the charge transfer unit which transfers said signal charges to be read;

    a charge transport unit which transports said signal charges accumulated in said charge accumulating units to said charge transfer unit; and

    a depletion prevention layer formed closer to said second-plane side than said charge accumulating units, the depletion prevention layer which prevents a depletion region around said charge accumulating units from reaching said second plane.

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