Non-volatile semiconductor memory device
First Claim
1. A non-volatile semiconductor storage device comprising a controller and a non-volatile memory, wherein said controller issues a storage instruction of data, received from an external unit, to said non-volatile memory with a first address specified, wherein said non-volatile memory has an error correction circuit, reads the stored data when a data storage error occurred during the data storage operation executed in response to the storage instruction from said controller, checks, via said error correction circuit, if the data that was read can be corrected, notifies said controller of a storage completion if the data can be corrected, and notifies said controller of a storage failure if the data cannot be corrected, and wherein, in response to the storage failure notification, said controller issues a storage instruction of the data transferred to said non-volatile memory, with a second address specified, said second address being a location where the data is to be stored.
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Accused Products
Abstract
When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
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Citations
10 Claims
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1. A non-volatile semiconductor storage device comprising a controller and a non-volatile memory,
wherein said controller issues a storage instruction of data, received from an external unit, to said non-volatile memory with a first address specified, wherein said non-volatile memory has an error correction circuit, reads the stored data when a data storage error occurred during the data storage operation executed in response to the storage instruction from said controller, checks, via said error correction circuit, if the data that was read can be corrected, notifies said controller of a storage completion if the data can be corrected, and notifies said controller of a storage failure if the data cannot be corrected, and wherein, in response to the storage failure notification, said controller issues a storage instruction of the data transferred to said non-volatile memory, with a second address specified, said second address being a location where the data is to be stored.
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3. A non-volatile semiconductor storage device comprising a controller, a volatile memory, a non-volatile memory, and an error correction circuit,
wherein said controller stores data, supplied from an external unit, into said volatile memory and issues a storage instruction to said non-volatile memory with a first address and the data supplied, wherein, if a data storage error occurs during the data storage operation executed in response to the storage instruction from said controller, said non-volatile memory notifies said controller of a storage failure, wherein, in response to the storage failure, said controller reads the data stored at the first address in said non-volatile memory, supplies the data that was read to said error correction circuit to check if the error can be corrected, completes the storage if the error can be corrected, and, if the error cannot be corrected, issues a storage instruction to said non-volatile memory with a second address and the data supplied, said data being stored in said volatile memory.
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4. A non-volatile semiconductor storage device comprising a controller, a non-volatile memory, and an error correction circuit,
instruction of data, received from an external unit, to said non-volatile memory with a first address specified, wherein said non-volatile memory reads the stored data when a data storage error occurred during the data storage operation executed in response to the storage instruction from said controller, wherein said error correction circuit checks if the data that was read can be corrected, notifies said controller of a storage completion if the data can be corrected, and notifies said controller of a storage failure if the data cannot be corrected, and wherein, in response to the storage failure notification, said controller issues a storage instruction of the data with a second address specified, said second address being a location where the data is to be stored.
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10. A non-volatile semiconductor storage device comprising a controller, a volatile memory, a non-volatile memory, and an error correction circuit,
wherein said controller causes said volatile memory to hold data supplied from an external unit, issues a storage instruction to said non-volatile memory with a first address and the data supplied, and reads data from said non-volatile memory with a second address supplied, holds it in said volatile memory, and then outputs the data to the external unit, wherein said non-volatile memory comprises data latch means for holding the data supplied for storage and, if a data storage error occurs during the storage operation executed in response to the storage instruction from said controller, notifies said controller of a storage failure, and wherein, in response to the storage failure notification, said controller reads the data stored at the first address of said non-volatile memory, supplies the data that was read to said error correction circuit, with a read-data path to said volatile memory blocked, for checking if the error can be corrected, completes the storage if the error can be corrected, and issues a storage instruction of the transferred data to said non-volatile memory with a third address specified if the error cannot be corrected.
Specification