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Plasma etching apparatus and plasma etching method

  • US 20040009617A1
  • Filed: 07/11/2003
  • Published: 01/15/2004
  • Est. Priority Date: 03/16/1995
  • Status: Abandoned Application
First Claim
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1. A plasma processing method for plasma processing a specimen by a plasma processing apparatus including a plasma generating unit, a process chamber capable of having an inside pressure thereof reduced, wherein the process chamber includes an outer cylinder having the capability of withstanding a reduced pressure, and an inner cylinder arranged inside the outer cylinder and a process gas supply unit for supplying a gas to the process chamber, a specimen table for holding a specimen, a vacuum pumping unit, and a monitor unit, the method comprising the step of:

  • detecting a temperature of the inner cylinder of the process chamber utilizing the monitor unit to one of continuously monitor the inner cylinder temperature and optionally monitor the inner cylinder temperature at a time of plasma processing of a specimen.

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