Nitrogen-free dielectric anti-reflective coating and hardmask
First Claim
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1. A method for processing a substrate, comprising:
- introducing a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen-containing organosilicon compound to the processing chamber; and
reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate, wherein the dielectric material comprises silicon and oxygen.
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Abstract
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
113 Citations
27 Claims
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1. A method for processing a substrate, comprising:
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introducing a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen-containing organosilicon compound to the processing chamber; and
reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate, wherein the dielectric material comprises silicon and oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of processing a substrate, comprising:
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depositing an anti-reflective coating on a dielectric layer by reacting a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen-containing organosilicon compound to deposit a nitrogen-free dielectric material on the substrate, wherein the anti-reflective coating comprises silicon and carbon;
depositing a photoresist material on the anti-reflective coating; and
patterning the photoresist layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for processing a substrate, comprising:
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depositing at least one organic or inorganic layer on a substrate surface;
forming a hardmask layer on the at least one organic or inorganic layer, wherein the hardmask layer is deposited by a process comprising reacting a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen-containing organosilicon compound to deposit a nitrogen-free dielectric material on the substrate, wherein the hardmask layer comprises silicon and oxygen and has a selectivity of oxide to hardmask of about 4;
1 or greater;
defining a pattern in at least one region of the hardmask layer; and
forming a feature definition in the at least one organic or inorganic layer by the pattern formed in the at least one region of the hardmask layer;
- View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification