Materials and gas chemistries for processing systems
First Claim
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1. A plasma processing system for processing a substrate, comprising:
- a plasma processing chamber within which a plasma is both ignited and sustained for said processing, said plasma processing chamber having an upper end and a lower end, said plasma processing chamber contains a material that does not substantially react with reactive gas chemistries that are delivered into said plasma processing chamber;
a coupling window disposed at an upper end of said plasma processing chamber. an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate;
a dc power supply coupled to said electromagnet arrangement, said dc power supply having a controller to vary a magnitude of said at least one direct current, thereby changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate.
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Abstract
A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.
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Citations
48 Claims
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1. A plasma processing system for processing a substrate, comprising:
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a plasma processing chamber within which a plasma is both ignited and sustained for said processing, said plasma processing chamber having an upper end and a lower end, said plasma processing chamber contains a material that does not substantially react with reactive gas chemistries that are delivered into said plasma processing chamber;
a coupling window disposed at an upper end of said plasma processing chamber. an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate;
a dc power supply coupled to said electromagnet arrangement, said dc power supply having a controller to vary a magnitude of said at least one direct current, thereby changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 33, 34, 35, 36, 37, 38, 39, 40, 41, 46, 47, 48)
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27. A plasma processing system for processing a substrate, comprising:
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a plasma processing chamber within which a plasma is both ignited and sustained for said processing, said plasma processing chamber having an upper end and a lower end, at least an inner surface of said plasma processing is made of a material which is selected from a group of materials consisting of silicon carbide, quartz, silicon, silicon dioxide, carbon, boron carbide, and boron nitride;
a coupling window disposed at an upper end of said plasma processing chamber. an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate; and
a dc power supply coupled to said electromagnet arrangement, said dc power supply having a controller to vary a magnitude of said at least one direct current, thereby changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate.
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28. A plasma processing system for processing a substrate, comprising:
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a plasma processing chamber within which a plasma is both ignited and sustained for said processing, said plasma processing chamber having an upper end and a lower end, at least an inner surface of said plasma processing is made of silicon carbide;
a coupling window disposed at an upper end of said plasma processing chamber. an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate; and
a dc power supply coupled to said electromagnet arrangement, said dc power supply having a controller to vary a magnitude of said at least one direct current, thereby changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate. - View Dependent Claims (29, 30)
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31. A method for controlling processing uniformity while processing a substrate using a plasma-enhanced process, comprising:
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providing a plasma processing chamber having a single chamber, substantially azithmuthally symmetric configuration within which a plasma is both ignited and sustained during said processing of said substrate, said plasma processing chamber having no separate plasma generation chamber;
providing a coupling window disposed at an upper end of said plasma processing system;
providing an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
providing an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate;
providing a dc power supply coupled to said electromagnet arrangement;
placing said substrate into said plasma processing chamber;
flowing reactant gases into said plasma processing chamber, said reactant gases include a combination of gases, wherein one or more gases of said combination of gases included in said reactant gases is a CxFyHzOw gas, and wherein x, y, z, and w are positive integers though any of z, w, and y can be zero;
striking said plasma out of said reactant gases; and
changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate. - View Dependent Claims (32, 42, 43, 44, 45)
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Specification