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Materials and gas chemistries for processing systems

  • US 20040011467A1
  • Filed: 07/11/2003
  • Published: 01/22/2004
  • Est. Priority Date: 11/15/1999
  • Status: Abandoned Application
First Claim
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1. A plasma processing system for processing a substrate, comprising:

  • a plasma processing chamber within which a plasma is both ignited and sustained for said processing, said plasma processing chamber having an upper end and a lower end, said plasma processing chamber contains a material that does not substantially react with reactive gas chemistries that are delivered into said plasma processing chamber;

    a coupling window disposed at an upper end of said plasma processing chamber. an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;

    an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field within said plasma processing chamber in the region proximate said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect processing uniformity across said substrate;

    a dc power supply coupled to said electromagnet arrangement, said dc power supply having a controller to vary a magnitude of said at least one direct current, thereby changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate said antenna to improve said processing uniformity across said substrate.

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