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Hetero-integration of semiconductor materials on silicon

  • US 20040012037A1
  • Filed: 07/18/2002
  • Published: 01/22/2004
  • Est. Priority Date: 07/18/2002
  • Status: Abandoned Application
First Claim
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1. A semiconductor structure, comprising:

  • a silicon substrate having first and second portions;

    an oxide layer overlying the first portion of the silicon substrate;

    a germanium layer overlying the oxide layer;

    a gallium arsenide layer overlying the germanium layer;

    silicon (Si) material overlying the second portion of the silicon substrate; and

    semiconductor devices formed in the silicon material and the gallium arsenide (GaAs) layer.

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