Hetero-integration of semiconductor materials on silicon
First Claim
1. A semiconductor structure, comprising:
- a silicon substrate having first and second portions;
an oxide layer overlying the first portion of the silicon substrate;
a germanium layer overlying the oxide layer;
a gallium arsenide layer overlying the germanium layer;
silicon (Si) material overlying the second portion of the silicon substrate; and
semiconductor devices formed in the silicon material and the gallium arsenide (GaAs) layer.
8 Assignments
0 Petitions
Accused Products
Abstract
High quality gallium arsenide (GaAs) (38) is grown over a thin germanium layer (26) and co-exists with silicon (40) for hetero-integration of devices. A bonded germanium wafer of silicon (22), oxide (24), and germanium (26) is formed and capped (30). The cap (30) and germanium layer (26) are partially removed so as to expose a silicon region (32) and leave a stack (31) of oxide, germanium, and capping layer on the silicon. Selective silicon is grown over the exposed silicon region. Silicon devices (36) are made in the selectively grown region of silicon (34). The remaining capping layer (30) is etched away to expose the thin layer of germanium (26). GaAs (38) is grown on the thin germanium layer (26), and GaAs devices (29) are built which can interoperate with the silicon devices (36). Alternatively, a smaller portion of the remaining cap (30) can be removed and germanium or silicon-germanium can be selectively grown on the exposed germanium (214) in order to form germanium or silicon-germanium devices (216). The smaller remaining cap can subsequently be removed to access the germanium and form GaAs devices (222) thereby allowing, GaAs, germanium-based, and silicon devices to co-exist.
266 Citations
31 Claims
-
1. A semiconductor structure, comprising:
-
a silicon substrate having first and second portions;
an oxide layer overlying the first portion of the silicon substrate;
a germanium layer overlying the oxide layer;
a gallium arsenide layer overlying the germanium layer;
silicon (Si) material overlying the second portion of the silicon substrate; and
semiconductor devices formed in the silicon material and the gallium arsenide (GaAs) layer. - View Dependent Claims (2, 3, 4)
-
-
5. A method of forming a hetero-integrated semiconductor device, comprising the steps of:
-
forming a wafer having a germanium (Ge) layer, an oxide layer, on a silicon (Si) substrate;
protecting a germanium region of the Ge layer;
exposing a silicon region of the Si substrate;
growing silicon material in the exposed silicon region;
forming silicon devices in the exposed silicon region;
exposing a portion of the Ge layer; and
growing compound semiconductor material on the exposed portion of the Ge layer; and
constructing compound semiconductor devices in the compound semiconductor material. - View Dependent Claims (6, 7, 8, 9, 10)
-
-
11. A method of forming a hetero-integrated semiconductor device, comprising the steps of:
-
forming a bonded wafer having germanium, oxide, and silicon layers;
capping the germanium layer with a nitride layer;
etching a portion of the capped layer, the germanium layer, and the oxide layer so as form an exposed silicon region;
selectively growing silicon over the exposed silicon region up to the capped layer;
forming silicon devices in the selectively grown silicon;
etching down the capped layer to expose the germanium layer;
growing GaAs on the germanium layer up to the selectively grown silicon; and
forming GaAs devices in the GaAs layer. - View Dependent Claims (12, 13, 14)
-
-
15. A method of forming a hetero-integrated semiconductor structure, comprising:
-
forming a germanium wafer having germanium, oxide, and silicon layers;
capping the wafer with a mask;
partially etching the wafer down to the silicon layer so as to create a stack on top of the silicon;
growing silicon material adjacent to the stack;
forming silicon devices in the silicon material;
removing a portion of the mask to expose a portion of the germanium layer;
growing germanium or silicon germanium over the exposed germanium region;
forming germanium or silicon-germanium devices in the grown germanium or silicon germanium;
removing the remaining mask to expose the remaining germanium region;
growing gallium arsenide on the exposed portion of the germanium layer; and
forming gallium arsenide devices in the GaAs layer. - View Dependent Claims (16)
-
-
17. A semiconductor structure, comprising:
-
a silicon substrate;
first and second stacks on the silicon substrate, each of the first and second stacks comprising a compound semiconductor layer over a germanium layer over an oxide layer, the oxide layer being formed on the silicon substrate;
side spacers adjacent to the first and second stacks; and
silicon material filled between the side spacers of the first and second stacks. - View Dependent Claims (18, 19, 20, 21)
-
-
22. A semiconductor structure, comprising:
-
a silicon substrate;
first and second stacks on the silicon substrate, the first stack comprising a compound semiconductor material over a germanium layer over an oxide layer, the oxide layer being formed on the silicon substrate, the second stack comprising a germanium material over an oxide layer, the oxide layer being formed on the silicon substrate;
side spacers adjacent to the first and second stacks; and
silicon material filled between the side spacers of the first and second stacks. - View Dependent Claims (23, 24, 25, 26, 31)
-
-
27. A semiconductor structure, comprising:
-
a silicon substrate; and
first and second stacks on the silicon substrate, the first stack comprising a compound semiconductor material over a germanium layer over an oxide layer, the oxide layer being formed on the silicon substrate, the second stack comprising silicon layer grown on the silicon substrate and formed adjacent to the compound semiconductor.
-
-
28. A semiconductor structure, comprising:
-
a silicon substrate;
first and second stacks on the silicon substrate, the first stack comprising a first compound semiconductor material over a germanium layer over an oxide layer, the oxide layer being formed on the silicon substrate, the second stack comprising a second compound semiconductor material over the germanium layer over the oxide layer, side spacers adjacent to the first and second stacks; and
silicon material filled between the side spacers of the first and second stacks. - View Dependent Claims (29)
-
-
30. A method of forming a hetero-integrated semiconductor structure, comprising:
-
forming a germanium wafer having germanium, oxide, and silicon layers;
capping the wafer with a protective dielectric capping layer;
patterning a mask on the wafer to expose selected regions;
partially etching the wafer in the selected regions down to the silicon layer so as to create a stack on top of the silicon;
growing silicon material adjacent to the stack;
forming silicon devices in the silicon material;
forming a second mask to expose a portion of the capping layer to expose the germanium layer;
growing germanium or silicon germanium over the exposed germanium region;
forming germanium or silicon-germanium devices in the grown germanium or silicon germanium;
forming a third mask to expose the remaining capping layer and exposing the germanium region;
growing gallium arsenide on the exposed portion of the germanium layer; and
forming gallium arsenide devices in the GaAs layer.
-
Specification