Electrically programmable three-dimensional memory
First Claim
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1. An electrically programmable three-dimensional integrated memory (EP-3DiM), comprising:
- a substrate circuit, said substrate circuit further comprising a substrate integrated circuit and an address-decoder, said substrate integrated circuit comprising an embedded RWM and/or an embedded processor;
at least an electrically programmable three-dimensional memory (EP-3DM) level, said EP-3DM level being stacked on top of said substrate circuit and connected with said substrate circuit through a plurality of inter-level connecting vias, said address-decoder decoding address for at least a portion of said EP-3DM level.
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Abstract
One greatest advantage of the three-dimensional memory (3D-M) is its integratibility. In a electrically programmable three-dimensional integrated memory (EP-3DiM), an electrically programmable 3D-M (EP-3DM) is integrated with an embedded RWM and/or an embedded processor. Collectively, the EP-3DiM excels in speed, density/cost, programmability and data security.
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Citations
20 Claims
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1. An electrically programmable three-dimensional integrated memory (EP-3DiM), comprising:
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a substrate circuit, said substrate circuit further comprising a substrate integrated circuit and an address-decoder, said substrate integrated circuit comprising an embedded RWM and/or an embedded processor;
at least an electrically programmable three-dimensional memory (EP-3DM) level, said EP-3DM level being stacked on top of said substrate circuit and connected with said substrate circuit through a plurality of inter-level connecting vias, said address-decoder decoding address for at least a portion of said EP-3DM level. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electrically programmable three-dimensional memory (EP-3DM), comprising:
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a substrate circuit, said substrate circuit comprising a plurality of active devices and an interconnect system connecting said active devices, said substrate circuit further comprising an address-decoder;
at least an EP-3DM level stacked on top of said substrate circuit and connected with said substrate circuit through a plurality of inter-level connecting vias, said EP-3DM level comprising a plurality of address-selection lines and EP-3DM cells, said address-decoder decoding address for at least a portion of said EP-3DM level. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An electrically programmable three-dimensional memory (EP-3DM) cell, comprising:
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a first top electrode;
a second bottom electrode;
a 3D-ROM layer between said first and second electrodes, said 3D-ROM layer further comprising an antifuse layer, said antifuse layer having a high resistance when un-programmed and a low resistance when programmed. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification