HIGH POWER SINGLE MODE VERTICAL CAVITY SURFACE EMITTING LASER

• US 20040013157A1
• Filed: 07/18/2002
• Published: 01/22/2004
• Est. Priority Date: 07/18/2002
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Deng, Hongyu, Lipson, Jan, Giaretta, Giorgio, Lenosky, Thomas
• Granted Patent: US 6,704,343 B2
• Time in Patent Office: Days
• US Class Current: 372/97
• CPC Class Codes: H01S 2301/163 Single longitudinal mode
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.

Claims

4-1. A mirror layer as defined in claim 11, wherein each cavity formed in the photonic crystal has a depth that extends through the photonic crystal.

11. In a vertical cavity surface emitting laser, a mirror layer for reflecting a single mode such that the vertical cavity surface emitting laser emits the single mode with increased power, the mirror layer comprising:

a plurality of Distributed Bragg reflector layers formed on an active region of the vertical cavity surface emitting laser, wherein the plurality of Distributed Bragg reflector layers terminates a gain cavity that includes one or more quantum wells; and

a photonic crystal formed on the plurality of Distributed Bragg reflector layers such that the photonic crystal forms an external cavity, wherein a plurality of cavities are formed in the photonic crystal to create a cavity structure in the photonic crystal.

1. An external cavity vertical cavity surface emitting laser (VCSEL)that emits a single mode, the external cavity VCSEL comprising:

a gain cavity bounded by lower Distributed Bragg Reflector layers and upper Distributed Bragg Reflector layers, wherein the lower Distributed Bragg Reflector layers are formed on a substrate and wherein an active region is formed between the lower Distributed Bragg Reflector layers and the upper Distributed Bragg Reflector layers; and

an external cavity bounded by the upper Distributed Bragg Reflector layers and a photonic crystal, wherein the photonic crystal includes a periodic cavity structure and has high reflectivity for a single mode.

2. An external cavity VCSEL as defined in claim 1, wherein the active region includes one or more quantum wells.

3. An external cavity VCSEL as defined in claim 1, wherein the lower Distributed Bragg Reflector layers have more individual layers than the upper Distributed Bragg Reflector layers.

4. An external cavity VCSEL as defined in claim 1, wherein each cavity in the periodic cavity structure has a depth.

5. An external cavity VCSEL as defined in claim 4, wherein the depth of each cavity extends into the active region.

6. An external cavity VCSEL as defined in claim 4, wherein the depth of each cavity does not extend into the active region.

7. An external cavity VCSEL as defined in claim 4, wherein each cavity in the cavity structure has a cross sectional shape, wherein the cross sectional shape is one of:

a circular cross sectional shape;

a square cross sectional shape;

a triangular cross sectional shape;

a hexagonal cross sectional shape; and

a geometric cross sectional shape.

8. An external cavity VCSEL as defined in claim 1, wherein the periodic cavity structure is one of:

a square cavity structure;

a triangular cavity structure;

a rhombic cavity structure;

a hexagonal cavity structure; and

a geometric cavity structure.

9. An external cavity VCSEL as defined in claim 1, wherein an aperture is enlarged such that more power is produced in the particular mode.

10. An external cavity VCSEL as defined in claim 1, wherein the external cavity does not have high reflectivity for other modes such that the other modes do not experience appreciable gain.

12. A mirror layer as defined in claim 11, wherein the cavity structure in the photonic crystal is periodic and includes at least one period.

13. A mirror layer as defined in claim 12, wherein the cavity structure in the photonic crystal is one of:

a triangular cavity structure;

a square cavity structure;

a rhombic cavity structure;

a honeycomb cavity structure; and

a geometric cavity structure

15. A mirror layer as defined in claim 11, wherein each cavity formed in the photonic crystal extends into the plurality of Distributed Bragg Reflector layers.

16. A vertical cavity surface emitting laser that emits a single mode, the vertical cavity surface emitting laser comprising:

a lower mirror layer formed on a substrate, wherein the first mirror layer includes Distributed Bragg Reflector layers;

an active region formed on the lower mirror layer, wherein the active region includes a gain medium that provides gain to photons that are reflected through the active region; and

an upper mirror layer formed on the active region, wherein the upper mirror layer includes;

a plurality of Distributed Bragg Reflector layers formed on the active region; and

a photonic crystal formed on the plurality of Distributed Bragg Reflector layers, wherein the single mode is reflected by the photonic crystal such that the single mode has appreciable gain.

17. A vertical cavity surface emitting laser as defined in claim 16, wherein the lower mirror layer includes more Distributed Bragg Reflector layers than the upper mirror layer.

18. A vertical cavity surface emitting laser as defined in claim 16, wherein the photonic crystal has a cavity structure formed therein.

19. A vertical cavity surface emitting laser as defined in claim 18, wherein the cavity structure formed in the photonic crystal is periodic.

20. A vertical cavity surface emitting laser as defined in claim 19, wherein each cavity in the cavity structure has a depth that extends through the photonic crystal and into the active region.

21. A vertical cavity surface emitting laser as defined in claim 20, wherein each cavity in the cavity structure has a cross sectional shape, wherein each cross sectional shape is one of:

a circular cross sectional shape;

a square cross sectional shape;

a triangular cross sectional shape;

a hexagonal cross sectional shape; and

a geometric cross sectional shape.

22. A vertical cavity surface emitting laser as defined in claim 18, wherein each cavity in the photonic crystal is filled with air.

23. A vertical cavity surface emitting laser as defined in claim 18, wherein the photonic crystal and the plurality of Distributed Bragg Reflector layers form an external cavity.

24. A vertical cavity surface emitting laser as defined in claim 16, wherein an aperture is enlarged such that more power is produced in the single mode.