Method and apparatus for providing gas to a processing chamber

• US 20040013577A1
• Filed: 07/17/2002
• Published: 01/22/2004
• Est. Priority Date: 07/17/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Ling, Ku, Vincent W., Ganguli, Seshadri
• Granted Patent: US 7,186,385 B2
• Time in Patent Office: Days
• US Class Current: 422/129
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4402 Reduction of impurities in the source gas
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/4482 by bubbling of carrier gas through liquid source material
• CPC Class Codes: C23C 16/4487 by using a condenser
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: Y10T 117/10 Apparatus
• CPC Class Codes: Y10T 117/1004 with means for measuring, testing, or sensing
• CPC Class Codes: Y10T 117/1008 with responsive control means

Abstract

A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

Claims

1. Apparatus for generating gas for a semiconductor processing system, comprising:

a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;

an inlet port and an outlet port formed through the canister and in communication with the upper region;

at least one baffle disposed within the upper region of the canister between the inlet port and the outlet port; and

a precursor material at least partially filling the lower region of the canister.

2. The apparatus of claim 1, wherein at least one of the inlet port and the outlet port is formed through the sidewall of the canister.

3. The apparatus of claim 1, wherein at least one of the inlet port and outlet port is formed through the top of the canister.

4. The apparatus of claim 3, further comprising:

a first valve coupled to the inlet port; and

a second valve coupled to the outlet port.

5. The apparatus of claim 1, further comprising a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister.

6. The apparatus of claim 5, wherein the second end is angled from about 15 degrees to about 90 degrees relative to an axis of the canister.

7. The apparatus of claim 5, wherein the second end of the tube is orientated toward the top of the canister.

8. The apparatus of claim 5, wherein the second end of the tube is capped and has at least one outlet opening formed through a wall of the tube proximate to the second end.

9. The apparatus of claim 1, further comprising a liquid intermixed with the precursor material and forming a slurry, wherein the liquid is non-reactive with the precursor material, has a negligible vapor pressure relative to the precursor material, and the precursor material is insoluble therein.

10. The apparatus of claim 9, wherein the precursor material is tungsten hexa-carbonyl and the liquid is diffusion pump oil.

11. The apparatus of claim 9, further comprising means for agitating the slurry.

12. The apparatus of claim 11, wherein the means for agitating is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.

13. The apparatus of claim 1, wherein the precursor material is selected from the group consisting of xenon difluoride, nickel carbonyl, tungsten hexa-carbonyl, and pentakis (dimethylamino) tantalum.

14. The apparatus of claim 1 further comprising an oil trap coupled to the outlet port.

15. The apparatus of claim 1, wherein the at least one baffle is a plurality of baffles.

16. The apparatus of claim 15, wherein the plurality of baffles extends at least partially into the lower region of the canister.

17. The apparatus of claim 1, further comprising a means for heating the precursor material.

18. The apparatus of claim 17, wherein the means for heating the precursor material is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.

19. The apparatus of claim 1, wherein the percursor material is selected from the group consisting of tetrakis (dimethylamino) titanium (TDMAT), tertbutyliminotris (diethylamino) tantalum (TBTDET), and pentakis (ethylmethylamino) tantalum (PEMAT).

20. Apparatus for generating gas for a semiconductor processing system, comprising:

a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;

an inlet port and an outlet port formed through the canister and in communication with the upper region; and

a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister; and

an aperture formed in the second end of the tube orientated towards the sidewall or top of the canister.

21. The apparatus of claim 20, wherein at least one of the inlet port and the outlet port is formed through the sidewall of the canister.

22. The apparatus of claim 20, wherein at least one of the inlet port and outlet port is formed through the top of the canister.

23. The apparatus of claim 22, further comprising:

a first valve coupled to the inlet port; and

a second valve coupled to the outlet port, the first and second valves fitted with mating disconnect fittings.

24. The apparatus of claim 20, wherein the aperture formed in the second end is angled from about 15 degrees to about 90 degrees relative to an axis of the canister.

25. The apparatus of claim 20, wherein the aperture formed in the second end of the tube is orientated toward the top of the canister.

26. The apparatus of claim 20, wherein the second end of the tube has a sealed bottom and the aperture is formed through a wall of the tube proximate to the second end.

27. The apparatus of claim 20, further compromising a precursor material at least partially filling the lower region of the canister.

28. The apparatus of claim 20, further comprising a liquid intermixed with the precursor material and forming a slurry, wherein the liquid is non-reactive with the precursor material, has a negligible vapor pressure relative to the precursor material, and the precursor material is insoluble therein.

29. The apparatus of claim 28, wherein the precursor material is selected from the group consisting of xenon difluoride, nickel carbonyl, tungsten hexa-carbonyl, and pentakis (dimethylamino) tantalum.

30. The apparatus of claim 28, wherein the precursor material is tungsten hexa-carbonyl and the liquid is diffusion pump oil.

31. The apparatus of claim 28, further comprising means for agitating the slurry.

32. The apparatus of claim 31, wherein the means for agitating is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.

33. The apparatus of claim 20, further comprising an oil trap coupled to the outlet port.

34. The apparatus of claim 20, further comprising at least one baffle disposed within the upper region of the canister between the inlet port and the outlet port.

35. The apparatus of claim 34, wherein the at least one baffle is a plurality of baffles.

36. The apparatus of claim 35, wherein the plurality of baffles extends at least partially into the lower region of the canister.

37. The apparatus of claim 20, further comprising a means for heating the interior volume of the canister.

38. The apparatus of claim 37, wherein the means for heating the interior volume of the canister is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.

39. The apparatus of claim 27, wherein the precursor material is selected from the group consisting of tetrakis (dimethylamino) titanium (TDMAT), tertbutyliminotris (diethylamino) tantalum (TBTDET), and pentakis (ethylmethylamino) tantalum (PEMAT).

40. Apparatus for generating gas for a processing system, comprising:

a canister having a sidewall, a top and a bottom defining an interior volume, the interior volume having an upper region and a lower region;

an inlet port and an outlet port formed through the canister and in communication with the upper region;

a first valve coupled to the inlet port; and

a second valve coupled to the outlet port, the first and second valves fitted with mating disconnect fittings for modular removal of the apparatus from a semiconductor process gas delivery system;

a tube having a first end coupled to the inlet port and a second end terminating in the upper region of the canister, wherein the second end is angled from about 15 degrees to about 90 degrees relative to a center axis of the canister; and

a plurality of baffles disposed within the upper region of the canister between the inlet port and the outlet port.

41. The apparatus of claim 40, further comprising solid precursor material at least partially filling the lower region of the canister;

a liquid intermixed with the solid precursor material forming a slurry, wherein the liquid is non-reactive with the solid precursor material, has a negligible vapor pressure relative to the solid precursor material, and the solid precursor material is insoluble therein;

means for heating the interior volume of the canister; and

means for agitating the slurry.

42. The apparatus of claim 41, wherein the means for heating the interior volume of the canister is at least one of a resistive heater disposed proximate to the sidewall, a cartridge heater disposed within the canister, or a preheated carrier gas.

43. The apparatus of claim 42, wherein the means for agitating the slurry is selected from the group consisting of a magnetic stirrer, a mixer, and a bubbler.

44. A method for generating gas for a processing system, comprising:

providing a precursor material disposed in a lower region of a canister;

flowing a carrier gas from an inlet port through an upper region of the canister along an extended mean path to an outlet port; and

heating the precursor material to generate a process gas.

45. The method of claim 44, wherein the step of flowing the carrier gas along the mean extended path further comprises directing a flow of the carrier gas away from the slurry.

46. The method of claim 45, wherein the flow is directed towards a sidewall of the canister.

47. The method of claim 45, wherein the flow is directed towards a top of the canister.

48. The method of claim 45, wherein the flow is directed through one or more apertures formed through a sidewall of the tube.

49. The method of claim 44, wherein the step of flowing the carrier gas along the mean extended path further comprises diverting a flow of the carrier gas around at least one baffle disposed between an inlet port and an outlet port of the canister.

50. The method of claim 49, wherein the at least one baffle is a plurality of baffles interleaved to form a serpentine path.

51. The method of claim 44, wherein the step of heating further comprises at least one of the heating steps from the group consisting of heating the canister, heating an interior volume of the canister, and heating the carrier gas prior to entering the canister.

52. The method of claim 44, further comprising the step of agitating the precursor material.

53. The method of claim 52, wherein the step of agitating the precursor material is accomplished by at least one of a magnetic stirrer, a mixer, or a bubbler.

54. The method of claim 52, further comprising the step of capturing particulate matter entrained in the process gas.

55. The method of claim 44, wherein the step of heating further comprises subliming the precursor material.

56. A method for generating a gas for a processing system comprising:

flowing a carrier gas between a plurality of baffles that define a tortorous flow path; and

generating a gas from a precursor material disposed between the baffles.

57. The method of claim 56, wherein the step of generating a gas further comprises subliming the precursor material.

58. The method of claim 57 further comprising tuning the flow of carrier gas between the baffles.

59. The method of claim 58, wherein the step of tuning further comprises adjusting at least one baffle attribute from the group consisting of baffle number, baffle spacing, and baffle shape.