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Method of cleaning a chemical vapor deposition chamber

  • US 20040013818A1
  • Filed: 03/04/2003
  • Published: 01/22/2004
  • Est. Priority Date: 07/19/2002
  • Status: Active Grant
First Claim
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1. A method of cleaning a chamber used to deposit a refractory metal film on one or more substrates, the method comprising:

  • plasma-treating and in-situ cleaning the chamber after each of the substrates is processed and removed from the chamber, the chamber being plasma-treated with a first gas including at least one of nitrogen (N) and hydrogen (H), the chamber being in-situ cleaned with a second gas.

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