Method of cleaning a chemical vapor deposition chamber
First Claim
1. A method of cleaning a chamber used to deposit a refractory metal film on one or more substrates, the method comprising:
- plasma-treating and in-situ cleaning the chamber after each of the substrates is processed and removed from the chamber, the chamber being plasma-treated with a first gas including at least one of nitrogen (N) and hydrogen (H), the chamber being in-situ cleaned with a second gas.
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Abstract
After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.
396 Citations
20 Claims
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1. A method of cleaning a chamber used to deposit a refractory metal film on one or more substrates, the method comprising:
plasma-treating and in-situ cleaning the chamber after each of the substrates is processed and removed from the chamber, the chamber being plasma-treated with a first gas including at least one of nitrogen (N) and hydrogen (H), the chamber being in-situ cleaned with a second gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
Specification