Method and apparatus for determining layer thickness and composition using ellipsometric evaluation

• US 20040014250A1
• Filed: 05/13/2003
• Published: 01/22/2004
• Est. Priority Date: 05/15/2002
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Hunt, Charles E., Peterson, Jeffrey J., Bjeletich, Peter J.
• Granted Patent: US 6,884,640 B2
• Time in Patent Office: Days
• US Class Current: 438/14
• CPC Class Codes: G01B 11/0616 of coating
• CPC Class Codes: G01B 11/0641 with measurement of polarization
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/41 Refractivity; Phase-affecting properties, e.g. optical path length G01N21/21 takes precedence

Abstract

One embodiment of the present invention provides a system that determines the composition of a layer within an integrated device. The system operates by first receiving the integrated device. Next, the system measures properties of the layer using electromagnetic radiation. The properties of the layer measured are used to determine an index of refraction for the layer. The system then solves for the composition of the layer using the index of refraction.

Claims

1. A method for determining a composition of a layer within an integrated device, comprising:

receiving the integrated device;

measuring properties of the layer using electromagnetic radiation;

determining an index of refraction for the layer from the measured properties; and

solving for the composition of the layer using the index of refraction.

2. The method of claim 1, wherein the properties measured using ellipsometry include properties of returned radiation received during measurement including a signal amplitude, a signal phase, and a signal polarization.

3. The method of claim 1, wherein determining the index of refraction for the layer involves accounting for an overlaying material layer on the integrated device.

4. The method of claim 1, wherein solving for the composition of the layer provides the Ge composition in a SiGe layer.

5. A method for determining a thickness of a layer within an integrated device, comprising:

receiving the integrated device;

measuring properties of the layer using electromagnetic radiation;

determining an index of refraction for the layer from the measured properties; and

solving for the thickness of the layer using the index of refraction.

6. The method of claim 5, wherein the properties measured using ellipsometry include properties of returned radiation received during measurement including a signal amplitude, a signal phase, and a signal polarization.

7. The method of claim 5, wherein determining the index of refraction for the layer involves accounting for an overlaying material layer on the integrated device.

8. The method of claim 5, wherein solving for the thickness of the layer produces the thickness of a SiGe layer.

9. A method for determining a composition of a layer within an integrated device, comprising:

receiving the integrated device;

measuring a first set of properties and a second set of properties of the layer using electromagnetic radiation, wherein the first set of properties and the second set of properties are measured for different types or conditions of incident radiation;

modeling the first set of properties of the layer to determine a first index of refraction for the layer;

modeling the second set of properties of the layer to determine a second index of refraction for the layer;

applying the first index of refraction and the second index of refraction to index of refraction models;

repeating the steps of modeling the first set of properties, modeling the second set of properties, and applying the first index of refraction and the second index of refraction to index of refraction models until results of applying the first index of refraction and the second index of refraction to index of refraction models agree; and

solving for the composition of the layer using the index of refraction.

10. The method of claim 9, wherein the properties measured using electromagnetic radiation include properties of returned radiation received during measurement including a signal amplitude, a signal phase, and a signal polarization.

11. The method of claim 9, wherein the different conditions of incident radiation can have at least one of a different wavelength, a different angle, and a combination of different wavelength and different angle.

12. The method of claim 9, wherein solving for the composition of the layer provides the Ge composition and the C composition in a SiGeC layer.

13. A method for determining a thickness of a layer within an integrated device, comprising:

receiving the integrated device;

measuring a first set of properties and a second set of properties of the layer using electromagnetic radiation, wherein the first set of properties and the second set of properties are measured for different types or conditions of incident radiation;

modeling the first set of properties of the layer to determine a first index of refraction for the layer;

modeling the second set of properties of the layer to determine a second index of refraction for the layer;

applying the first index of refraction and the second index of refraction to index of refraction models;

repeating the steps of modeling the first set of properties, modeling the second set of properties, and applying the first index of refraction and the second index of refraction to index of refraction models until results of applying the first index of refraction and the second index of refraction to index of refraction models agree; and

solving for the thickness of the layer using the index of refraction.

14. The method of claim 13, wherein the properties measured using electromagnetic radiation include a signal amplitude, a signal phase, and a signal polarization, wherein the signal amplitude, the signal phase, and the signal polarization are parameters of returned radiation received during measurement.

15. The method of claim 13, wherein different conditions include one of a different wavelength, a different angle, and a combination of different wavelength and different angle.

16. The method of claim 13, wherein solving for the thickness provides the thickness of a SiGeC layer.

17. An apparatus for determining a composition of a layer within an integrated device, comprising:

a receiving mechanism configured to receive the integrated device;

a measuring mechanism configured to measure properties of the layer using electromagnetic radiation;

a modeling mechanism configured to model the properties of the layer to determine an index of refraction for the layer; and

a solving mechanism configured to solve for the composition of the layer using the index of refraction.

18. An apparatus for determining a thickness of a layer within an integrated device, comprising:

a receiving mechanism configured to receive the integrated device;

a measuring mechanism configured to measure properties of the layer using electromagnetic radiation;

a modeling mechanism configured to model the properties of the layer to determine an index of refraction for the layer; and

a solving mechanism configured to solve for the thickness of the layer using the index of refraction

19. An apparatus for determining a composition of a layer within an integrated device, comprising:

a receiving mechanism configured to receive the integrated device;

a measuring mechanism configured to measure a first set of properties and a second set of properties of the layer using electromagnetic radiation, wherein the first set of properties and the second set of properties are measured at different conditions;

a modeling mechanism configured to model the first set of properties of the layer to determine a first index of refraction for the layer;

wherein the modeling mechanism is further configured to model the second set of properties of the layer to determine a second index of refraction for the layer;

wherein the modeling mechanism is further configured to apply the first index of refraction and the second index of refraction to index of refraction models;

a repeating mechanism configured to repeat the steps of modeling the first set of properties, modeling the second set of properties, and applying the first index of refraction and the second index of refraction to index of refraction models until results of applying the first index of refraction and the second index of refraction to index of refraction models agree; and

a solving mechanism configured to solve for the composition of the layer using the index of refraction.

20. An apparatus for determining a thickness of a layer within an integrated device, comprising:

a receiving mechanism configured to receive the integrated device;

a measuring mechanism configured to measure a first set of properties and a second set of properties of the layer using electromagnetic radiation, wherein the first set of properties and the second set of properties are measured at different conditions;

a modeling mechanism configured to model the first set of properties of the layer to determine a first index of refraction for the layer;

wherein the modeling mechanism is further configured to model the second set of properties of the layer to determine a second index of refraction for the layer;

wherein the modeling mechanism is further configured to apply the first index of refraction and the second index of refraction to index of refraction models;

a repeating mechanism configured to repeat the steps of modeling the first set of properties, modeling the second set of properties, and applying the first index of refraction and the second index of refraction to index of refraction models until results of applying the first index of refraction and the second index of refraction to index of refraction models agree; and

a solving mechanism configured to solve for the thickness of the layer using the index of refraction.