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Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations

  • US 20040014395A1
  • Filed: 03/25/2003
  • Published: 01/22/2004
  • Est. Priority Date: 03/28/1995
  • Status: Active Grant
First Claim
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1. An apparatus for chemical mechanical polishing (CMP) of a wafer, comprising:

  • (a) a rotatable polishing platen with an overlying polishing pad wetted with an abrasive slurry, the platen be rotatably mounted to a chassis;

    (b) a rotatable polishing head for holding the wafer against the polishing pad, the wafer comprising a semiconductor substrate underlying an oxide layer; and

    , (c) an endpoint detector, comprising, (c1) a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and, (c2) a window disposed adjacent to a hole formed through the platen, the window providing a pathway for the laser beam to impinge on the wafer at least during part of a period of time when the wafer overlies the window.

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