Semiconductor unit, semiconductor apparatus, and method for making the same, electrooptic apparatus, and electronic apparatus

• US 20040016932A1
• Filed: 05/21/2003
• Published: 01/29/2004
• Est. Priority Date: 05/30/2002
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki
• Granted Patent: US 7,180,924 B2
• Time in Patent Office: Days
• US Class Current: 257/80
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/83001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01031 Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H10K 50/844 : Encapsulations
• CPC Class Codes: H10K 50/85 : Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/873 : Encapsulations
• CPC Class Codes: H10K 59/875 : Arrangements for extracting light from the devices
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention provides a semiconductor unit and a semiconductor apparatus having a low electric resistance as a whole, even when the electric resistance of a functional layer or a semiconductor substrate is high. A method of making the semiconductor unit and apparatus is also provided. An electrooptic apparatus and an electronic apparatus are also provided. A semiconductor apparatus includes a predetermined substrate and a semiconductor unit bonded to the substrate. The semiconductor unit includes a highly conductive layer and a functional layer including a semiconductor element.

Claims

1. A semiconductor unit, comprising:

a functional layer including a semiconductor element; and

a highly conductive layer.

3. A semiconductor apparatus, comprising:

a predetermined substrate; and

the semiconductor unit of claim 1 bonded on the predetermined substrate.

10. The semiconductor apparatus according to claim 3, the semiconductor unit being connected to a circuit of the predetermined substrate to form an integrated circuit.

2. A semiconductor apparatus, comprising:

a semiconductor substrate;

a functional layer including a semiconductor element, the functional layer being formed on a surface of the semiconductor substrate; and

a highly conductive layer.

4. The semiconductor apparatus according to claim 2, the semiconductor substrate exhibiting a semi-insulating property or including an insulating layer.

5. The semiconductor apparatus according to claim 2, further including electrodes to drive the semiconductor element that are formed at an upper face of the functional layer.

6. The semiconductor apparatus according to claim 2, the highly conductive layer being at least one of a high carrier density layer and a high carrier mobility layer.

7. The semiconductor apparatus according to claim 2, the semiconductor element being a compound semiconductor device and including at least one of a light-emitting diode, a surface emitting laser, a photodetector, a photodiode, a field-effect transistor, a high electron mobility transistor, a bipolar transistor, a thyristor, an inductor, a capacitor, and a resistor.

8. The semiconductor apparatus according to claim 2, the semiconductor element being a silicon semiconductor device and constitutes at least one of an integrated circuit, a photodiode, a transistor, and a diode.

9. The semiconductor apparatus according to claim 2, the semiconductor element being a surface emitting laser having a pair of multilayer reflector structures, and the highly conductive layer being a high carrier mobility layer, and

the high carrier mobility layer being disposed inside the multilayer reflector structure disposed at the semiconductor substrate or the predetermined substrate.

11. An electrooptic apparatus, comprising:

the semiconductor apparatus according to claim 2.

12. An electronic apparatus, comprising:

the electrooptic apparatus according to claim 11.

13. A method of making a semiconductor unit, comprising:

forming a functional layer including a semiconductor element, and a highly conductive layer on a surface of a semiconductor substrate; and

separating the functional layer and the highly conductive layer placed on the semiconductor substrate from the semiconductor substrate.

15. The method of making the semiconductor unit according to claim 13,

further including providing the semiconductor substrate with a sacrificial layer disposed under the functional layer and the highly conductive layer, and separating the functional layer and the highly conductive layer from the semiconductor substrate by etching away the sacrificial layer.

16. The method of making the semiconductor unit according to claim 15,

further including forming a dicing groove in the semiconductor substrate, and the separating functional layer and the highly conductive layer from the semiconductor substrate by etching away the sacrificial layer.

17. A method of making a semiconductor apparatus, comprising:

bonding the semiconductor unit according to claim 13 onto a substrate including at least one of silicon, quartz, glass, sapphire, metal, ceramic, and plastic.

18. The method of making the semiconductor apparatus according to claim 17, further including electrically connecting the semiconductor element bonded on the substrate to a circuit formed on the substrate.

14. A method of making a semiconductor unit, comprising:

forming a functional film including semiconductor element, and a highly conductive layer on a surface of a semiconductor substrate;

bonding a film to the surface of the semiconductor substrate, the surface being provided with the semiconductor element; and

separating the functional layer and the highly conductive layer from the semiconductor substrate.