Light emitting device
First Claim
1. A light emitting device comprising:
- a semiconductor light emitting unit producing a light, said light emitting unit being composed of a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type opposite to said first conductive type, said second semiconductor layer being integrally stacked on said first semiconductor layer to define therebetween an interface;
a pair of electrodes being attached respectively to said first and second semiconductor layers to apply a voltage across said interface for emitting the light from around said interface, a light guide superimposed on said first semiconductor layer and directing the light therethrough, said first semiconductor layer being developed directly on said light guide to form a unitary structure with said light guide and said second semiconductor layer;
said light guide having a radiation surface through which said light is given off,
wherein said radiation surface is formed with a refractor layer which comprises an array of a first medium and a second medium, said first and second mediums having refraction indexes different from each other and being arranged alternately across said radiation surface.
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Accused Products
Abstract
A semiconductor light emitting device gives a large radiation surface with an enhanced light radiating capability. A N-type GaN layer and a P-type GaN layer are stacked to define therebetween an interface where a light is generated upon application of voltage across the interface. A light guide on which the GaN layers are developed is utilized to give a wide radiation surface from which the light is given off. The radiation surface is formed with a refractor layer composed of an array of a first medium and a second medium which have individual refraction indexes different from each other and are arranged alternately across the radiation surface. Thus, the light guide can be best utilized to give a large radiation surface, yet formed with the refractor layer which reduces multiple reflections inside of the light guide for effectively passing or radiating the light transmitted through the light guide.
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Citations
25 Claims
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1. A light emitting device comprising:
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a semiconductor light emitting unit producing a light, said light emitting unit being composed of a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type opposite to said first conductive type, said second semiconductor layer being integrally stacked on said first semiconductor layer to define therebetween an interface;
a pair of electrodes being attached respectively to said first and second semiconductor layers to apply a voltage across said interface for emitting the light from around said interface, a light guide superimposed on said first semiconductor layer and directing the light therethrough, said first semiconductor layer being developed directly on said light guide to form a unitary structure with said light guide and said second semiconductor layer;
said light guide having a radiation surface through which said light is given off,
whereinsaid radiation surface is formed with a refractor layer which comprises an array of a first medium and a second medium, said first and second mediums having refraction indexes different from each other and being arranged alternately across said radiation surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification