High performance system-on-chip discrete components using post passivation process
First Claim
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1. A post passivation system, comprising:
- a semiconductor substrate, having at least one interconnect metal layer over said semiconductor substrate, and a passivation layer over the at least one interconnect metal layer, wherein the passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point; and
a discrete component, formed over said passivation layer and connected to said at least one top level metal contact point;
wherein said passivation opening'"'"'s width is larger than about 0.1 um.
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Abstract
A system and method for forming post passivation discrete components, is described. High quality discrete components are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
57 Citations
45 Claims
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1. A post passivation system, comprising:
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a semiconductor substrate, having at least one interconnect metal layer over said semiconductor substrate, and a passivation layer over the at least one interconnect metal layer, wherein the passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point; and
a discrete component, formed over said passivation layer and connected to said at least one top level metal contact point;
wherein said passivation opening'"'"'s width is larger than about 0.1 um. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of forming a post passivation system, comprising:
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providing a semiconductor substrate, having at least one interconnect metal layer over said semiconductor substrate, and a passivation layer over the at least one interconnect metal layer, wherein the passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point; and
forming a discrete component, formed over said passivation layer and connected to said at least one top level metal contact point;
wherein said at least one passivation opening is formed to a width larger than about 0.1 um. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification