Silicon nitride antifuse for use in diode-antifuse memory arrays
First Claim
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1. A memory array comprising a plurality of memory cells, each memory cell comprising:
- a first diode portion;
a second diode portion vertically above the first diode portion; and
a silicon nitride antifuse in contact with the first or the second diode portion.
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Abstract
Silicon nitride antifuses can be advantageously used in memory arrays employing diode-antifuse cells. Silicon nitride antifuses can be ruptured faster and at a lower breakdown field than antifuses formed of other materials, such as silicon dioxide. Examples are given of monolithic three dimensional memory arrays using silicon nitride antifuses with memory cells disposed in rail-stacks and pillars, and including PN and Schottky diodes. Pairing a silicon nitride antifuse with a low-density, high-resistivity conductor gives even better device performance.
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Citations
23 Claims
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1. A memory array comprising a plurality of memory cells, each memory cell comprising:
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a first diode portion;
a second diode portion vertically above the first diode portion; and
a silicon nitride antifuse in contact with the first or the second diode portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory array comprising a plurality of memory cells, each memory cell comprising:
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a first diode portion;
a second diode portion wherein the first or the second diode portion comprises in-situ doped polysilicon; and
a dielectric-rupture antifuse comprising silicon nitride in contact with the second diode portion. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A monolithic three dimensional memory array comprising:
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first conductors extending in a first direction at a first height above a substrate;
second conductors extending in a second direction at a second height above the substrate, wherein the second direction is different from the first direction; and
antifuses comprising silicon nitride. - View Dependent Claims (17, 18, 19)
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20. A monolithic three dimensional memory array comprising memory cells, each memory cell comprising:
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a first diode portion;
a second diode portion; and
an antifuse comprising silicon nitride. - View Dependent Claims (21, 22, 23)
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Specification