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Silicon nitride antifuse for use in diode-antifuse memory arrays

  • US 20040016991A1
  • Filed: 06/30/2003
  • Published: 01/29/2004
  • Est. Priority Date: 04/28/2000
  • Status: Active Grant
First Claim
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1. A memory array comprising a plurality of memory cells, each memory cell comprising:

  • a first diode portion;

    a second diode portion vertically above the first diode portion; and

    a silicon nitride antifuse in contact with the first or the second diode portion.

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