Method for integrating low-K materials in semiconductor fabrication
First Claim
1. A method for integrating low-K materials in semiconductor fabrication, comprising the steps of:
- a. providing a semiconductor structure having a dielectric layer thereover;
said dielectric layer being comprised of a low-K material;
b. patterning said dielectric layer to form pillar openings;
c. depositing a pillar layer over said semiconductor structure;
thereby filling said pillar openings with said pillar layer; and
d. planarizing said pillar layer to form pillars embedded in said dielectric layer.
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Abstract
A method for integrating low-K materials in semiconductor fabrication. The process begins by providing a semiconductor structure having a dielectric layer thereover, wherein the dielectric layer comprising an organic low-K material. The dielectric layer is patterned to form pillar openings. A pillar layer is deposited over the semiconductor structure; thereby filling the pillar openings with the pillar layer. The pillar layer is planarized to form pillars embedded in said dielectric layer. The pillar layer comprises a material having good thermal stability, good structural strength, and good bondability of spin coating back-end materials, improving the manufacturability of organic, low-K dielectrics in semiconductor fabrication. In one embodiment, the pillars are formed prior to forming dual damascene interlayer contacts. In another embodiment, pillars are formed simultaneously with interlayer contacts.
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Citations
13 Claims
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1. A method for integrating low-K materials in semiconductor fabrication, comprising the steps of:
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a. providing a semiconductor structure having a dielectric layer thereover;
said dielectric layer being comprised of a low-K material;
b. patterning said dielectric layer to form pillar openings;
c. depositing a pillar layer over said semiconductor structure;
thereby filling said pillar openings with said pillar layer; and
d. planarizing said pillar layer to form pillars embedded in said dielectric layer. - View Dependent Claims (2, 3, 4)
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5. A method for integrating low-K materials in semiconductor fabrication, comprising the steps of:
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a. providing a semiconductor structure having a dielectric layer thereover;
said dielectric layer comprising an organic low-K material;
b. patterning said dielectric layer to form pillar openings;
c. depositing a pillar layer over said semiconductor structure;
thereby filling said pillar openings with said pillar layer;
d. planarizing said pillar layer to form pillars embedded in said dielectric layer;
e. patterning said dielectric layer to form via openings and trench openings;
f. forming an interconnect layer over said semiconductor structure; and
g. planarazing said interconnect layer, stopping on said dielectric layer. - View Dependent Claims (6, 7, 8, 9)
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10. A method for integrating low-K materials in semiconductor fabrication, comprising the steps of:
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a. providing a semiconductor structure having a conductive structure thereon;
said semiconductor structure and said conductive structure having a dielectric layer thereover;
said dielectric layer being comprised of a low-K material;
b. patterning said dielectric layer to form pillar openings and via openings;
said via openings being over said conductive structures and said pillar openings forming a matrix pattern surrounding said conductive structures;
c. depositing a pillar and contact layer over said semiconductor structure;
thereby filling said pillar openings and said via openings with said pillar and contact layer;
d. planarizing said pillar and contact layer to form pillars and contacts embedded in said dielectric layer; and
e. forming an interconnect pattern over said contacts. - View Dependent Claims (11, 12, 13)
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Specification