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Sub-micron high input voltage tolerant input output (I/O) circuit

  • US 20040017229A1
  • Filed: 07/16/2003
  • Published: 01/29/2004
  • Est. Priority Date: 01/09/2001
  • Status: Active Grant
First Claim
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1. An apparatus for providing an input output from an integrated circuit, the apparatus comprising:

  • an input/output (I/O) pad;

    an upper pair of P-channel Metal Oxide Semiconductor (PMOS) devices, a first of the upper PMOS devices having source coupled to a power supply (VDDO) and drain coupled to source of a second upper PMOS device, the second PMOS device having drain coupled to the I/O pad;

    a lower pair of N-channel MOS devices (NMOS), a first of the upper NMOS devices having a drain coupled to the I/O pad and a source coupled to a drain of a second lower NMOS device, the second NMOS device having a source coupled to a ground potential;

    a first bias circuit coupled to a gate of the first upper PMOS device, said bias circuit providing a first bias voltage to the gate of the first upper PMOS device when the I/O pad is in an output mode and VDDO voltage otherwise;

    a second bias circuit coupled to a gate of the second lower NMOS device, said bias circuit providing a second bias voltage to the gate of the second lower NMOS device when the I/O pad is in an output mode and a ground voltage otherwise;

    a third bias circuit coupled to a gate of the second upper PMOS device, said bias circuit providing a third bias voltage, coupled to the gate of the second upper MOS device; and

    a fourth bias circuit coupled to a gate of the first lower NMOS device, said bias circuit providing a fourth bias voltage to the gate of the first lower MOS device, the fourth bias voltage being in a range, the range having a maximum value of VDDP+VT and a minimum value of (VDDO

    VTp), where VDDP and VDDO are power supply voltages and VT and VTp are offset voltages.

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