Image display device having a drive circuit employing improved active elements

• US 20040017365A1
• Filed: 06/24/2003
• Published: 01/29/2004
• Est. Priority Date: 07/24/2002
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Akimoto, Hajime, Shiba, Takeo, Hatano, Mutsuko, Tai, Mitsuharu, Yamaguchi, Shinya
• Application Number:
  US10/601,643
• Publication Number:
  US 20040017365A1
• Time in Patent Office: Days
• US Class Current: 345/204
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: G09G 2310/027 Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
• CPC Class Codes: G09G 2310/0297 Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
• CPC Class Codes: G09G 3/3614 Control of polarity reversal in general
• CPC Class Codes: G09G 3/3688 suitable for active matrices only
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30

Abstract

An image display device has an active matrix substrate provided with a drive circuit formed of high-performance active elements such as thin film transistors which operate with high mobility for driving pixel sections arranged in a matrix configuration. The image display device has discontinuous converted regions (virtual tiles) TL formed of roughly-band-shaped-crystal silicon films in circuit sections constituting a drive circuit DDR disposed around a pixel region PAR on the active matrix substrate SUB1, and has the drive circuit DDR formed of active elements such as thin film transistors fabricated in the discontinuous converted regions TL with their channel direction in a direction of growth direction of the roughly-band-shaped-crystal silicon films.

Claims

1. An image display device having an active matrix substrate provided with a pixel region having a large number of pixels arranged in a matrix configuration, and a drive circuit region disposed outside of said pixel region for supplying drive signals to said large number of pixels via interconnection lines,

wherein

said drive circuit region comprises a plurality of stages of circuit sections successively processing an externally supplied display signal to produce a drive signal to be supplied to said pixel region, each of said plurality of stages of circuit sections having a different function,

at least one of said plurality of stages of circuit sections is provided with active elements fabricated in discontinuous converted regions formed of roughly-band-shaped-crystal silicon films having grain boundaries continuous in generally one direction, and

said active elements have a direction of movement of carriers therein in a direction of said grain boundaries.

2. An image display device according to claim 1, wherein said circuit sections of each of said plurality of stages are arranged along one side of said active matrix substrate at specified intervals at a periphery thereof.

3. An image display device according to claim 1, wherein circuit sections having said active elements formed therein are in a final output stage of said plurality of stages, and

said interconnection lines coupling said final output stage to said plurality of pixels are arranged at wider intervals on a pixel-region side thereof than on a final-output-stage side thereof.

4. An image display device according to claim 1, wherein said circuit sections having said active elements formed therein are arranged in two or more parallel rows along one side of said active matrix substrate at specified intervals at a periphery thereof.

5. An image display device according to claim 1, wherein said active elements are arranged along two opposed sides of said active matrix substrate at specified intervals at peripheries thereof.

6. An image display device according to claim 1, wherein areas of said circuit sections having said active elements formed therein vary with a scale thereof.

7. An image display device according to claim 1, wherein said circuit sections having said active elements formed therein are arranged in two or more parallel rows along one side of said active matrix substrate, and said circuit sections in one of said two or more rows are offset in longitudinal directions thereof from said circuit sections in an adjacent one of said two or more rows.

8. An image display device according to claim 1, wherein said active elements are arranged in two or more parallel row along one side of said active matrix substrate, and said active elements in one of said two or more parallel rows are offset in longitudinal directions thereof from said active elements in an adjacent one of said two or more parallel rows.

9. An image display device according to claim 1, wherein said active elements are thin film transistor.

10. An image display device according to claim 1, further comprising a color filter substrate and a liquid crystal layer, wherein said liquid crystal layer is sandwiched between said active matrix substrate and said color filter substrate superposed on said active matrix substrate with a specified spacing therebetween.

11. An image display device according to claim 1, wherein each of said pixels further comprises an organic EL layer.