Fluid ejection device

• US 20040017427A1
• Filed: 05/13/2003
• Published: 01/29/2004
• Est. Priority Date: 03/21/2001
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Chavarria, Victorio A., Enck, Ronald L., Bengali, Sadiq S.
• Granted Patent: US 7,037,736 B2
• Time in Patent Office: Days
• US Class Current: 347/44
• CPC Class Codes: B41J 2/14072 Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
• CPC Class Codes: B41J 2/14129 Layer structure
• CPC Class Codes: B41J 2/1603 of the front shooter type
• CPC Class Codes: B41J 2/1628 dry etching
• CPC Class Codes: B41J 2/1631 photolithography
• CPC Class Codes: B41J 2/1642 thin film formation by CVD [chemical vapor deposition]
• CPC Class Codes: B41J 2/1645 thin film formation by spincoating
• CPC Class Codes: B41J 2202/13 Heads having an integrated circuit
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/823425 manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes

Abstract

A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Claims

1. An ink-jet printhead fabrication method using a silicon wafer substrate, the method comprising:

providing a single mask for etching of MOSFET active region contact vias and separate substrate contact vias; and

simultaneously etching the MOSFET active region contact vias and the substrate contact vias using a selective etch wherein said the ratio of etch rate of silicon oxide;

silicon is at least 10;

1.

2. The method as set forth in claim 1 comprising:

prior to providing said single mask, forming a prior mask defining island regions of the substrate where ink drop generator active devices are to be formed and where ink heater resistors associated with the active devices are to be formed; and

forming said active devices.

3. The method as set forth in claim 2 comprising:

forming isolation oxide regions between said island regions.

4. The method as set forth in claim 3 wherein providing the single mask further comprises:

forming a superjacent layer of PSG over the substrate; and

forming a patterned photoresist mask as said single mask over the PSG, wherein the mask has a pattern defining regions of the PSG where both said active device vias and said separate substrate contact vias are to be formed.

5. The method as set forth in claim 4 comprising:

said separate substrate contact vias to be formed are located through said isolation oxide regions.

6. An ink-jet printhead fabricated in accordance with the process as set forth in claim 1.

7. An inkjet pen having a printhead fabricated in accordance with the process as set forth in claim 1.

8. An ink-jet printhead comprising:

a silicon wafer substrate; and

substrate contacts for electrically grounding said substrate extending through device isolation oxide.

9. An ink-jet pen comprising:

an ink supply;

fluidically coupled to the ink supply, a printhead, wherein said printhead includes a silicon wafer substrate and substrate contacts for electrically grounding said substrate extending through device isolation oxide of the printhead.