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Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material

  • US 20040018307A1
  • Filed: 02/21/2003
  • Published: 01/29/2004
  • Est. Priority Date: 07/26/2002
  • Status: Active Grant
First Claim
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1. A method of forming a thin film layer through an atomic layer deposition process, comprising:

  • introducing a first reacting material including a tantalum precursor and a titanium precursor to a substrate to chemisorb a portion of the first reacting material onto the substrate; and

    introducing a second reacting material including oxygen to the substrate to chemisorb a portion of the second reacting materials onto the substrate and to form a solid material thereon.

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