Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry

• US 20040018647A1
• Filed: 02/24/2003
• Published: 01/29/2004
• Est. Priority Date: 07/02/2002
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Yang, Chan-Syun, Jones, Steven J., Lian, Lei, Davis, Matthew F., Deshmukh, Shashank C.
• Application Number:
  US10/374,464
• Publication Number:
  US 20040018647A1
• Time in Patent Office: Days
• US Class Current: 438/8
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers.

Claims

1. A method for controlling lateral etching during an etching process, comprising:

laterally etching a lower layer of a stack of layers;

radiating a spectrum of light over said lower layer being etched and an area over said stack of layers proximate to said lower layer being etched;

measuring intensity of light reflected from at least one of said stacked layers positioned lateral to said lower layer being etched; and

ceasing said etching process upon measuring a predetermined metric associated with said intensity of reflected light from said at least one of said stacked layers.

2. The method of claim 1, wherein said laterally etched lower layer is an undercut formed in said lower layer.

3. The method of claim 1, wherein said laterally etched lower layer forms a notched gate of a transistor.

4. The method of claims 1, wherein said etching process comprises an isotropic etching process.

5. The method of claim 1, wherein said radiating step further comprises:

providing a light source producing light having wavelengths in a range of about 200 nanometers to 800 nanometers.

6. The method of claim 1, wherein said radiating step further comprises:

radiating said light substantially perpendicular to said stack of layers.

7. The method of claim 1, wherein said measuring step further comprises:

measuring intensity changes of one or more wavelengths of light respectively reflected from one or more layers positioned lateral to said laterally etched lower layer.

8. The method of claim 7, wherein said measuring step further comprises:

detecting different wavelengths of reflected light;

selecting at least one of said wavelengths of detected light; and

measuring changes of intensity of said selected wavelengths of light over a period of time.

9. The method of claim 8, wherein said selecting at least one of said wavelengths of detected light further comprises filtering undesirable wavelengths of reflected light.

10. The method of claim 1, wherein said predetermined metric comprises a magnitude of intensity of light having a particular wavelength reflected from a particular layer of said stack of layers.

11. The method of claim 1, wherein said predetermined metric comprises a change of intensity over a period of time.

12. The method of claim 8, wherein said selecting step comprises:

identifying a wavelength of light that reflects from an upper surface of said lower layer and reflects from an upper surface of a sub-layer formed beneath said lower layer; and

monitoring in-phase intensity changes of said reflected light from said upper surface of said lower layer and said upper surface of a sub-layer formed beneath said lower layer.

13. The method of claim 8, wherein said selecting step comprises:

identifying a wavelength of light that reflects from an upper surface of said lower layer and reflects from an upper surface of a sub-layer formed beneath said lower layer; and

monitoring out-of-phase intensity changes of said reflected light from said upper surface of said lower layer and said upper surface of a sub-layer formed beneath said lower layer.

14. A method for controlling lateral etching of a notch in a transistor gate layer of a transistor during an etching process, said transistor comprising a stack of layers disposed below said transistor gate layer, said method comprising:

laterally etching a lower portion of said transistor gate layer;

radiating a selected wavelength of light over an upper surface of said transistor gate;

measuring intensity of light reflected from the upper surface of said transistor gate and a layer of said stack of layers positioned beneath said transistor gate; and

ceasing said etching process upon measuring a predetermined metric associated with said intensity of reflected light from said at least one of said stacked layers.

15. The method of claim 14, wherein said measuring step comprises measuring intensity of at least one wavelength that is in-phase light reflected from the upper surface of said transistor gate and the layer positioned beneath said transistor gate.

16. The method of claim 14, wherein prior to said laterally etching step, said method further comprises:

measuring intensity of light reflected from the upper surface of said transistor gate and the layer positioned beneath said transistor gate.

17. The method of claim 14, wherein said measuring step comprises measuring intensity of at least one wavelength that is out-of-phase light reflected from a transition area defined by an area of said transistor gate proximately said notch and a vacuum environment within said notch.

18. The method of claim 14, wherein said measuring step further comprises:

measuring intensity of light reflected from the upper surface of said transistor gate and the layer positioned beneath said transistor gate; and

measuring intensity of at least one wavelength that is out-of-phase light reflected from a transition area defined by an area of said transistor gate proximately said notch and a vacuum environment within said notch.

19. Apparatus for controlling lateral etching during an etching process, comprising:

means for laterally etching a lower layer of a stack of layers;

means for radiating a spectrum of light over said lower layer being etched and an area over said stack of layers proximate to said lower layer being etched;

means for measuring intensity of light reflected from at least one of said stacked layers positioned lateral to said lower layer being etched; and

means for ceasing said etching process upon measuring a predetermined metric associated with said intensity of reflected light from said at least one of said stacked layers.

20. The apparatus of claim 19, wherein said laterally etched lower layer is an undercut formed in said lower layer.

21. The apparatus of claim 19, wherein said laterally etched lower layer forms a notched gate of a transistor.

22. The apparatus of claims 19, wherein said etching process comprises an isotropic etching process.

23. The apparatus of claim 19, wherein said radiating means further comprises:

providing a light source producing light having wavelengths in a range of about 200 nanometers to 800 nanometers.

24. The apparatus of claim 19, wherein said radiating means further comprises:

radiating said light substantially perpendicular to said stack of layers.

25. The apparatus of claim 19, wherein said measuring means further comprises:

measuring intensity changes of one or more wavelengths of light respectively reflected from one or more layers positioned lateral to said laterally etched lower layer.

26. The apparatus of claim 25, wherein said measuring means further comprises:

means for detecting different wavelengths of reflected light;

means for selecting at least one of said wavelengths of detected light; and

means for measuring changes of intensity of said selected wavelengths of light over a period of time.

27. The apparatus of claim 19, wherein said means for selecting at least one of said wavelengths of detected light comprises a filtering means for removing undesirable wavelengths of reflected light.

28. The apparatus of claim 19, wherein said predetermined metric comprises a magnitude of intensity of light having a particular wavelength reflected from a particular layer of said stack of layers.

29. The apparatus of claim 19, wherein said predetermined metric comprises a change of intensity over a period of time.

30. The apparatus of claim 26, wherein said selecting means comprises:

identifying a wavelength of light that reflects from an upper surface of said lower layer and reflects from an upper surface of a sub-layer formed beneath said lower layer; and

monitoring in-phase intensity changes of said reflected light from said upper surface of said lower layer and said upper surface of a sub-layer formed beneath said lower layer.

31. The apparatus of claim 26, wherein said selecting means comprises:

identifying a wavelength of light that reflects from an upper surface of said lower layer and reflects from an upper surface of a sub-layer formed beneath said lower layer; and

monitoring out-of-phase intensity changes of said reflected light from said upper surface of said lower layer and said upper surface of a sub-layer formed beneath said lower layer.