Methods for etching using building blocks
First Claim
1. A method used to fabricate an integrated circuit device on a wafer or substrate at a stage where a gate oxide is disposed over the wafer or substrate, a polysilicon layer is disposed thereover, a patterned hardmask is disposed thereover, a patterned antireflective coating is disposed thereover, and a patterned photoresist is disposed thereover, the method comprising steps of:
- before stripping the photoresist, etching the polysilicon utilizing a first etch chemistry for a first period of time; and
etching the polysilicon utilizing a second etch chemistry for a second period of time.
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Accused Products
Abstract
One embodiment of the present invention is a method used to fabricate an integrated circuit device on a wafer or substrate at a stage where a gate oxide is disposed over the wafer or substrate, a polysilicon layer is disposed thereover, a patterned hardmask is disposed thereover, a patterned antireflective coating is disposed thereover, and a patterned photoresist is disposed thereover, the method including steps of: (a) before stripping the photoresist, etching the polysilicon utilizing a first etch chemistry for a first period of time; and (b) etching the polysilicon utilizing a second etch chemistry for a second period of time.
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Citations
35 Claims
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1. A method used to fabricate an integrated circuit device on a wafer or substrate at a stage where a gate oxide is disposed over the wafer or substrate, a polysilicon layer is disposed thereover, a patterned hardmask is disposed thereover, a patterned antireflective coating is disposed thereover, and a patterned photoresist is disposed thereover, the method comprising steps of:
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before stripping the photoresist, etching the polysilicon utilizing a first etch chemistry for a first period of time; and
etching the polysilicon utilizing a second etch chemistry for a second period of time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method used to fabricate an integrated circuit device on a wafer or substrate at a stage where a gate oxide is disposed over the wafer or substrate, a polysilicon layer is disposed thereover, a hardmask is disposed thereover, an antireflective coating is disposed thereover, and a patterned photoresist is disposed thereover, the method comprising steps of:
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etching to open the hardmask;
etching the polysilicon utilizing a first fluorine-based etch chemistry for a first period of time;
stripping the photoresist and the antireflective coating;
etching the polysilicon utilizing a second fluorine-based etch chemistry for a second period of time; and
overetching the polysilicon. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification