Double stop structure for a pressure transducer

• US 20040020305A1
• Filed: 04/01/2003
• Published: 02/05/2004
• Est. Priority Date: 10/24/2001
• Status: Active Grant

• Current Assignee: Alexander A. Ned, Anthony D. Kurtz
• Original Assignee: Alexander A. Ned, Anthony D. Kurtz
• Inventors: Kurtz, Anthony D., Ned, Alexander A.
• Granted Patent: US 6,813,956 B2
• Time in Patent Office: Days
• US Class Current: 73/754
• CPC Class Codes: G01L 19/0618 Overload protection
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A stop member is secured to a piezoresistive semiconductor bossed diaphragm at the peripheral area, and includes a first and second slotted apertures in communication with the central active area, the first and second slotted apertures correspond in location with opposing sides of a central boss. The stop member includes a stop cavity located between the first slotted aperture and the second slotted aperture, and the stop cavity overlies the central boss and is separated therefrom to enable the diaphragm to deflect when a force is applied and to enable the central boss to impinge on the surface of the stop cavity when an excessive force is applied. The first and second slotted apertures permit another force to be applied to the active region of the diaphragm in a direction opposite to the stopped direction. A second stop member is secured to the diaphragm to provide stopping in either direction.

Claims

1. A semiconductor sensor for measuring differential pressure across the sensor diaphragm and operable in the presence of an excess unidirectional force applied to the sensor from either direction to stop said sensor diaphragm from further deflection during the presence of said excess force which tends to fracture said diaphragm, comprising:

a planar semiconductor diaphragm comprising;

a central active area on a top surface surrounded by a groove of a given width and depth which forms a central boss on said top surface and a bottom surface opposite said bossed surface, said central area within said groove capable of deflection; and

a peripheral non-active area surrounding said groove; and

a relatively smooth bottom surface;

piezoresistive sensors formed on said bottom surface of said diaphragm that correspond in location on said bottom surface with said groove on opposing sides of said central boss of said top surface;

a first stop member secured to said diaphragm at said peripheral area on said top surface, said stop member comprising;

a first slotted aperture and a second slotted aperture in communication with said active area, said first slotted aperture and said second slotted aperture extending generally along the length of said active area and which correspond in location with opposing sides of said central boss;

a stop cavity located between said first slotted aperture and said second slotted aperture, said stop cavity overlying said central boss and separated therefrom to enable said diaphragm to deflect when a force is applied and to enable said central boss to impinge on the surface of said stop cavity when an excessive force is applied, said first and second slotted apertures permitting another force to be applied to said active region of said diaphragm in a direction opposite to said stopped direction; and

a second stop member secured to said diaphragm on said bottom surface, wherein said second stop member comprises;

a first slotted aperture and a second slotted aperture in communication with said active area, said first slotted aperture and said second slotted aperture extending generally along the length of said active area and which correspond in location with opposing sides of said central boss on said top surface;

a stop cavity located between said first slotted aperture and said second slotted aperture, said stop cavity overlying said central boss on said top surface and separated from said bottom surface of the active area to enable said diaphragm to deflect when a force is applied and to enable said bottom surface to impinge on the surface of said stop cavity when an excessive force is applied, said first and second slotted apertures permitting another force to be applied to said active region of said diaphragm in a direction opposite to said stopped direction.

2. The sensor according to claim 1, said diaphragm further comprising contact areas extending from said sensors to said peripheral area of said diaphragm.

3. The sensor according to claim 2, wherein at least one of said first and second stop members include a plurality of cutout portions on the periphery thereof for accessing said contact areas.

4. The sensor according to claim 3, wherein said diaphragm is formed of silicon.

5. The sensor according to claim 4, wherein said piezoresistive sensors are Wheatstone bridge circuits.

6. The sensor according to claim 5, wherein said stop members are composed of borosilicate glass.

7. The sensor according to claim 6, wherein said first slot and said second slot are substantially parallel and approximately equidistant from a central axis of said diaphragm.

8. The sensor according to claim 1 wherein said stop members are fabricated from an insulator.

9. A stop member for a differential semiconductor sensor employing a bossed diaphragm, comprising:

a planar member having a first slotted aperture and a second slotted aperture, said first and said second slotted apertures substantially parallel and extending through said planar member, said first and said second slotted apertures positioned so that when said stop member is disposed on a bossed diaphragm said first and said second slotted apertures are located along the outer edge of the active region of the diaphragm, said slotted apertures being relatively as long as the active region; and

a stop cavity located between said first slotted aperture and said second slotted aperture, to allow a central boss of said diaphragm to impinge upon the surface of said stop cavity when an excessive force is applied to said diaphragm.

10. The stop member according to claim 9, wherein said planar member is composed of borosilicate glass.

11. The stop member according to claim 10, wherein said stop member further comprises a plurality of cutout portions on the periphery of said planar member for accessing contact areas on said bossed diaphragm.

12. The stop member according to claim 11, wherein said first slot and said second slotted apertures are approximately equidistant from a central axis of said stop member.

13. A double stop structure for a semiconductor pressure transducer employing a bossed diaphragm, comprising:

a first stop member including;

a plurality of cutout portions on the periphery thereof for accessing peripheral contact areas of a bossed diaphragm of a pressure transducer;

a first cavity in a central portion of said first stop member for receiving said diaphragm of a pressure transducer; and

two slotted apertures adjacent said first cavity and extending through said first stop member permitting access to the environment for receiving a pressure; and

a second stop member including;

a second cavity formed in a central portion of said second stop member for receiving said diaphragm; and

two slotted apertures adjacent said second cavity and extending through said second stop member permitting access to the environment for receiving a pressure, said first stop and said second stop member operable under excessive force to prevent said diaphragm from fracturing.

14. The structure of claim 13, wherein said first and said second stop members are composed of borosilicate glass.

15. The structure of claim 14, wherein said slotted apertures of said first and said second stop members are substantially parallel to each other.

16. The structure according to claim 14, wherein said slotted apertures of said first and said second stop members coincide with each other, and are approximately equidistant from a central axis of said first and second stop members.

17. A method of manufacturing a differential pressure transducer, comprising:

fabricating a bossed diaphragm comprising a first substrate composed of silicon, and a second substrate composed of silicon dioxide, said diaphragm including an central active region, and a peripheral non-active region separated by a groove which defines a central boss capable of deflecting;

disposing a plurality of piezoresistive sensing elements on said active region;

forming a plurality of contact areas on said diaphragm that extend from said sensing elements to said peripheral region; and

forming a first stop member including a cavity in the central portion thereof, a plurality of cutout portions of the periphery thereof, and two slotted apertures extending through said stop member, and

forming a second stop member including a cavity in the central portion thereof and two substantially parallel slotted apertures extending through said second stop member, and

placing said first stop member on the bossed surface of said diaphragm to enable said boss to impinge on said stop member for a force in a first direction, and

placing said second stop member on the surface opposite said boss to enable said diaphragm surface opposite said boss to impinge on said stop member for a force in a direction opposite to said first direction.

18. The method according to claim 17 further fabricating a piezoresistive sensor array on said surface of said diaphragm opposite said boss.

19. The method of claim 18, the steps of forming a first and a second stop member further comprising:

forming said first and said second stop members of borosilicate glass.

20. The method of claim 18, further comprising the step of electrostatically bonding said first and said second stop members to said diaphragm.